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  • 1
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    Unknown
    Age determination of sediment core LANVIHAN, Lann Vihan, France (2018)
    PANGAEA
    In:  European Pollen Database (EPD)
    Details
    Publication Date: 2024-02-16
    Keywords: Age, 14C AMS; Age, 14C calibrated; Age, dated; Age, dated, range, maximum; Age, dated, range, minimum; Age, dated material; Age, dated standard deviation; Calendar age; Calendar age, maximum/old; Calendar age, minimum/young; DEPTH, sediment/rock; Lann Vihan; LANVIHAN; Thickness
    Type: Dataset
    Format: text/tab-separated-values, 63 data points
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    DATA PANGAEA
  • 2
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    Unknown
    Pollen profile LANVIHAN, Lann Vihan, France (2018)
    PANGAEA
    In:  European Pollen Database (EPD)
    Details
    Publication Date: 2024-03-06
    Keywords: AGE; Alismataceae; Allium; Alnus; Apiaceae; Artemisia; Asphodelus; Asteraceae; Betula; Brassicaceae; Butomus; Calluna; Campanulaceae; Cannabis/Humulus; Carpinus; Caryophyllaceae; Centaurea; Centaurea cyanus; Cerealia-type; Chenopodiaceae; Cichorioideae; Cistaceae; Convolvulus arvensis; Convolvulus sepium; Corylus; Counting, palynology; Crassulaceae; Cupressus; Cyperaceae; DEPTH, sediment/rock; Dinoflagellates; Ephedra; Epilobium; Ericaceae; Euphorbia; Fabaceae; Fagopyrum; Fagus; Hedera; Hottonia-type; Hydrocharis; Hydrocotyle; Ilex; Iris pseudacorus; Isoetes; Lamiaceae; Lann Vihan; LANVIHAN; Lemna; Ligustrum; Linaria; Linum; Lonicera; Lysimachia; Lythrum; Malvaceae; Monolete spore(s); Myriophyllum alterniflorum; Myriophyllum spicatum; Myriophyllum verticillatum; Osmunda; Pinus; Plantago; Poaceae; Polygonum aviculare; Polygonum persicaria; Polygonum-type; Polypodiaceae; Polypodium; Potamogeton; Primulaceae; Pteridium; Quercus; Quercus ilex; Ranunculaceae; Rhamnus; Rosaceae; Rubiaceae; Rumex; Rumex hydrolapathum; Salix; Sambucus ebulus; Scrophulariaceae; Solanaceae; Sparganium; Spergularia; Spores, trilete; Statice; Symphytum; Tilia; Trifolium; Typha angustifolia; Typha latifolia; Ulmus; Valerianaceae; Violaceae
    Type: Dataset
    Format: text/tab-separated-values, 5369 data points
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  • 3
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    Unknown
    Lithology of sediment core LANVIHAN, Lann Vihan, France (2018)
    PANGAEA
    In:  European Pollen Database (EPD)
    Details
    Publication Date: 2024-02-16
    Keywords: Depth, bottom/max; DEPTH, sediment/rock; Depth, top/min; Lann Vihan; LANVIHAN; Lithology/composition/facies
    Type: Dataset
    Format: text/tab-separated-values, 36 data points
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    DATA PANGAEA
  • 4
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    Unknown
    Age determination of sediment core CROIX, Port-La-Croix, France (2018)
    PANGAEA
    In:  European Pollen Database (EPD)
    Details
    Publication Date: 2024-02-16
    Keywords: Age, 14C AMS; Age, 14C calibrated; Age, dated; Age, dated, range, maximum; Age, dated, range, minimum; Age, dated material; Age, dated standard deviation; Calendar age; Calendar age, maximum/old; Calendar age, minimum/young; CROIX; DEPTH, sediment/rock; Port-La-Croix; Sample, optional label/labor no; Thickness
    Type: Dataset
    Format: text/tab-separated-values, 50 data points
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  • 5
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    Unknown
    Pollen profile CROIX, Port-La-Croix, France (2018)
    PANGAEA
    In:  European Pollen Database (EPD)
    Details
    Publication Date: 2024-02-16
    Keywords: AGE; Alnus; Apiaceae; Artemisia; Asteraceae; Betula; Brassicaceae; Butomus; Calluna; Campanulaceae; Centaurea; Cerealia-type; Chenopodiaceae; Cichorioideae; Convolvulus sepium; Corylus; Counting, palynology; CROIX; Cyperaceae; DEPTH, sediment/rock; Dinoflagellates; Fagus; Hedera; Hydrocotyle; Ilex; Isoetes; Lamiaceae; Liliaceae; Linaria; Monolete spore(s); Myriophyllum alterniflorum; Myriophyllum spicatum; Pinus; Plantago; Poaceae; Polygonum persicaria; Polypodium; Port-La-Croix; Quercus; Ranunculaceae; Rhamnus; Rubiaceae; Rumex; Rumex hydrolapathum; Salix; Solanum dulcamara; Sparganium; Spores, trilete; Statice; Tilia; Typha angustifolia; Typha latifolia; Ulmus; Violaceae
    Type: Dataset
    Format: text/tab-separated-values, 2009 data points
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  • 6
    facet.materialart.
    Unknown
    Lithology of sediment core CROIX, Port-La-Croix, France (2018)
    PANGAEA
    In:  European Pollen Database (EPD)
    Details
    Publication Date: 2024-02-16
    Keywords: CROIX; Depth, bottom/max; DEPTH, sediment/rock; Depth, top/min; Lithology/composition/facies; Port-La-Croix
    Type: Dataset
    Format: text/tab-separated-values, 21 data points
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  • 7
    Electronic Resource
    Electronic Resource
    Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs quantum wires and dots (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3789-3791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence and photoluminescence excitation experiments have been performed on lattice-matched InGaAs/InP quantum wells, wires, and dots grown by metalorganic vapor-phase epitaxy and processed by electron-beam lithography. An enhancement of the intrinsic photoluminescence mechanism is found with decreasing dimensionality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346307
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Disorder-induced photoluminescence up-conversion in InAs/GaAs quantum-dot samples (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5489-5491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence up-conversion under cw excitation in semiconductor quantum-dot structures is systematically studied in a sample exhibiting a crossover between two-dimensional and three-dimensional (3D) growth modes. We probe the existence of carrier up-conversion by using ultrathin quantum wells close to the quantum-dot layer. We show that the efficiency of the up-conversion is closely related to the disorder induced by the 3D-growth mode of the quantum dots. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459622
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  • 9
    Electronic Resource
    Electronic Resource
    Study of the band alignment in (Zn, Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1863-1868 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on photoluminescence excitation spectroscopy performed on several (Zn, Cd)Se/ZnSe quantum wells at low temperature. Experimental results are compared with a calculation of the heavy- and light-hole excitonic transition energies. It is shown that the energy difference between the first heavy- and light-hole transitions E1H1 and E1L1 can be very sensitive to the valence-band offset under some circumstances, making a determination of this parameter then possible. The strain-free relative valence-band offset is found qv0=13%±2%. The heavy-hole excitons are type-I excitons, whereas the light-hole excitons are type-II excitons. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372105
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  • 10
    Electronic Resource
    Electronic Resource
    Optical studies of GaAs quantum well based field-effect transistor (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1346-1348 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical response of a GaAs-Ga(Al)As one-side-modulation-doped quantum well is studied by photoluminescence and excitation spectroscopy at T=2 K. The electronic concentration is controlled in a field-effect-transistor-like structure. 1011 cm−2 electrons are sufficient to wipe out the strong excitonic resonances which dominate the photoluminescence excitation spectrum when the well is depleted of its carriers. While the lowest lying excitation peak coincides with the maximum of the photoluminescence line when the GaAs channel is empty, the two peaks move in opposite directions with increasing carrier concentration due to the inflating Fermi surface and to band-gap renormalization effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98674
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    Paper (German National Licenses)
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