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  • 1
    Electronic Resource
    Electronic Resource
    Electromagnetic modes and prism-film coupling in anisotropic planar waveguides of epitaxial (101) rutile thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7823-7830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report optical waveguiding in single-crystal, epitaxial (101) oriented rutile (TiO2) thin films grown on (112¯0) sapphire (α-Al2O3) substrates using the metal-organic chemical vapor deposition technique. The electromagnetic field distributions and propagation constants for asymmetric planar waveguides composed of an anisotropic dielectric media applicable to these films are derived. Modifications to the prism-film coupling theory for this anisotropic case are also discussed. By application of this model to (101) oriented rutile thin films, we directly obtain values of the ordinary and extraordinary refractive indexes, n0 and ne, of the rutile thin films as well as film thicknesses. We obtain typical values of the refractive indexes (n0=2.5701±0.0005; ne=2.934±0.001) near to those for bulk rutile single crystals indicating the exceptional quality of these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353931
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  • 2
    Electronic Resource
    Electronic Resource
    Raman scattering and x-ray diffractometry studies of epitaxial TiO2 and VO2 thin films and multilayers on α-Al2O3(112¯0) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2841-2847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of TiO2 and VO2 single layers and TiO2/VO2 multilayers were grown on (112¯0) sapphire (α-Al2O3) substrates using the metalorganic chemical vapor deposition technique and were characterized using Raman scattering and four-circle x-ray diffractometry. X-ray diffraction results indicate that the films are high quality single crystal material with well defined growth plane and small in-plane and out-of-plane mosaic. Single-layer films are shown to obey the Raman selection rules of TiO2 and VO2 single crystals. The close adherence to the Raman selection rules indicates the high degree of orientation of the films, both parallel and perpendicular to the growth plane. Selection rule spectra of two and three layer TiO2/VO2 multilayers are dominated by the VO2 layers with only minimal signature of the TiO2 layers. Due to the low band gap of semiconducting vanadium dioxide, we attribute the strong signature of the VO2 layers to resonant enhancement of the VO2 Raman component accompanied with absorption of the both the incident and scattered laser light from the TiO2 layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353036
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  • 3
    Electronic Resource
    Electronic Resource
    Substrate-affected instability in accumulation-mode InP metal-insulator-semiconductor field-effect transistor (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5694-5698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism for drain current drift in accumulation-type InP metal-insulator-semiconductor field-effect transistor has in the past several years been attributed to oxide traps, interface states, and bulk traps. In this study we have found that deep levels in the semi-insulating InP substrate material can in some cases dominate the current drift of the accumulation-mode metal-insultor-semiconductor field-effect transistor. Iron, which is a deep-level acceptor, when present in large concentrations in semi-insulating InP substrate material, appears to provide poor transistor properties and a large long-term current drift.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340305
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  • 4
    Electronic Resource
    Electronic Resource
    Double resonant behavior of microstrip ring resonator in Tl-based high Tc superconducting films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3281-3283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High Tc Tl–Ba–Ca–Cu–O superconducting thin films have been made by the dc magnetron sputtering followed by postannealing. In this study, a Tl-based microstrip ring resonator was fabricated by using standard microelectronic photolithographic patterning and wet chemical etching. Experimental results indicated that these ring resonators exhibit the best unloaded Q of 3269 at its resonant frequency of 3.35 GHz and some other samples display the double resonant behavior at 77 K. The frequency difference of the double resonant peaks depends on the input microwave power, and the splitting is ascribed to spatial variations in the film microstructure. The physical properties of the films are about 1 μm thick, as high as 105 K transition temperature, and greater than 105 A/cm2 current density at zero magnetic field and 77 K. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112437
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxy-induced phase of near-stoichiometry PbTiO3 films prepared by metalorganic chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 408-410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric PbTiO3 thin films have been prepared by a low-pressure MOCVD process. Epitaxial films with a crystal structure of a bulk equilibrium tetragonal phase were readily obtained within a range of growth conditions. However, by providing excess Pb in the growth process, we have observed an epitaxy-induced phase for near-stoichiometry PbTiO3 which possesses a perovskite-like, but possible, orthorhombic structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107897
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  • 6
    Electronic Resource
    Electronic Resource
    Substrate surface step effects on microstructure of epitaxial films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3116-3117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sapphire (0001) basal plane is a commonly used substrate for film depositions. Due to the threefold rotational symmetry of the (0001) substrate surface, epitaxial films deposited are expected to form at most three variants with relative orientations of 120° and 240°. However, epitaxial TiO2 (tetragonal) and VO2 (monoclinic) films deposited on sapphire (0001) substrates by the metalorganic chemical vapor deposition technique were found to have six variants of relative orientations of 60°, 120°, 180°, 240°, and 300° based on the x-ray diffraction studies. Furthermore, epitaxial MgO (cubic) films deposited on sapphire (0001) substrates by the molecular beam epitaxy technique were found to have two variants which are mirror images about the (12¯10) plane from the high resolution electron microscopy. We show that these unconventional film microstructures found experimentally are caused by the substrate surface steps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107978
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  • 7
    Electronic Resource
    Electronic Resource
    The magnetic and transport properties of high-critical-current Tl2Ba2Ca2Cu3Ox superconducting thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1123-1125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly c-axis-oriented Tl2Ba2Ca2Cu3Ox superconducting thin films with the critical current density as high as 1×107 A/cm2 at 87 K were obtained by single-target dc sputtering on LaAlO3(100) substrates followed by encapsulated compensate annealing. The strong linear temperature dependence of zero-field critical current at low temperatures suggests a creep-dominated behavior. Preliminary field dependence studies on the critical current density in low-field regime (〈2 kOe) shows no evidence of hysteresis commonly encountered in films with higher granularity. The scaling behavior of the global pinning force density exhibits strong resemblance to conventional type-II superconductors with the pinning force density of the same order of magnitude as that in strong pinned NbN thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106364
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of ZrO2 on the texturing and properties of melt-processed Y1Ba2Cu3O7−δ (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2306-2308 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of ZrO2 is found to be very effective as the nucleation sites to promote the oriented growth of Y1Ba2Cu3O7−δ (YBCO) during peritectic solidification. Extended regions of well- textured YBCO grains with superior superconducting properties of the YBCO bulk are readily obtained by a single-step melt process at much lower process temperatures. At 77 K, the platelike Josephson weak-link behaviors observed in pure melt-processed YBCO have been effectively eliminated, indicating that the coherency between the spherulitic superconducting YBCO grains may have been greatly improved by ZrO2 additions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111652
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  • 9
    Electronic Resource
    Electronic Resource
    Preparation of single-crystal Y3Al5O12 thin film by metalorganic chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1777-1779 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal yttrium aluminum garnet (Y3Al5O12 or YAG) thin films have been grown on (111) Gd3Ga5O12 substrate by metalorganic chemical vapor deposition. X-ray diffraction, selective-area electron diffraction, and transmission electron microscopy were used to confirm the single-crystal nature of [111]-oriented single-crystal Y3Al5O12 thin films. We determined that the epitaxial relationship between the film and the substrate is (111)[11¯0]Y3Al5O12//(111)[11¯0]Gd3Ga5O12.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111805
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  • 10
    Electronic Resource
    Electronic Resource
    Preparation and structure of PbZrO3 epitaxial films by metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1754-1756 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal PbZrO3 thin films have been grown on (001) SrTiO3 substrates by metalorganic chemical vapor deposition. The single-crystal nature of c-axis oriented PbZrO3 film is confirmed by x-ray diffraction, selective area electron diffraction, and transmission electron microscopy. The epitaxial relationship between the PbZrO3 film and the SrTiO3 substrate was found to be (001)[100]PbZrO3(parallel)(001)[110]SrTiO3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109596
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