ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
AlN is considered as the most suitable substrate material for further development of highquality and high performance nitride-based micro- and opto-electronics. AlN ingots are often grownon SiC seeds. To solve the formation of cracks due to the difference in lattice parameters betweenseed and crystal we chose to “adapt” the lattice mismatch by a buffer layer of the (AlN)x(SiC)1-xsolid solution. This paper gives some inputs on the growth of AlN and the solid solution by thesublimation technique, in terms of materials compatibility, hetero- and homo-epitaxial growth ofAlN and on the preparation of crack-free solid solution single crystals
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1501.pdf
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