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  • 1
    Electronic Resource
    Electronic Resource
    Photochemical etching of n-InP as a function of temperature and illumination (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 814-819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photochemical (PC) etching of n-InP using an Ar+ laser and dilute phosphoric acid solutions was studied as a function of temperature, power, illumination frequency, and duty cycle. The etch rate was found to be independent of time and to increase fourfold by increasing temperature from 20 to 50 °C with an activation energy (approximately-greater-than)0.34 eV. Thus the process is found to be reaction rate limited. The etch rate was observed to increase with power for low-power levels and then saturate near an irradiance of 200 W/cm2 at 20 °C. The photoetch rate, i.e., the etch rate divided by the fraction of time the Ar+ light is on, was affected by illumination duty cycle but not chopping frequency in the range 100–3200 Hz. These results are explained based on a rate equation model for material removal. Finally, a new application for PC etching is presented: sample preparation for transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347183
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  • 2
    Electronic Resource
    Electronic Resource
    Scattering, absorption, and anomalous spectral tuning of 1.3 μm semiconductor diode lasers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4140-4144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of scattering and absorbing regions which exist along the stripe of 1.3 μm InGaAsP semiconductor diode lasers are examined. A model which accounts for scattering and absorbing nonuniformities is used to explain correlations between scattering, absorption, and the spectral properties of the lasers. Normally the dominant mode of the spectrum of a semiconductor laser shifts to longer wavelength as current is increased. Occasionally, the dominant mode will shift to shorter wavelength with increasing current for a limited current range. This negative tuning can be explained by considering the effect of multiple scatterers combined with a localized absorber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350845
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  • 3
    Electronic Resource
    Electronic Resource
    Short-external-cavity module for enhanced single-mode tuning of InGaAsP and AlGaAs semiconductor diode lasers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2385-2388 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The construction and single-mode tuning characteristics of a short-external-cavity (SXC) module for InGaAsP and AlGaAs semiconductor diode lasers are presented. The SXC system is a cost effective, simple, and rugged means to achieve single-mode tuning and complete spectral coverage over large spectral regions with normally multimode lasers. With AlGaAs lasers, complete spectral coverage in overlapping ∼5-cm−1 intervals over ∼400 cm−1 is obtained, while with InGaAsP diode lasers, complete spectral coverage in overlapping ∼5-cm−1 intervals of 100–200 cm−1 is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142251
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  • 4
    Electronic Resource
    Electronic Resource
    Quantum-well strain and thickness characterization by degree of polarization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7640-7645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAsP/InP single quantum wells grown by gas-source molecular-beam epitaxy have been characterized for their strain and thickness using degree of polarization (DOP) of the edge emission photoluminescence at room temperature. The DOP is a measure of the relative strengths of TE- and TM-polarized e–hh and e–lh transitions. The value of the DOP increases with a decrease in thickness of the well and as the strain varies from tension to compression. For example, we observe a variation of DOP from 20% to 79% when the strain varies from 1% tension to 1% compression for a 30 A(ring) layer and from 27% to 62% when the thickness of a lattice-matched well is varied from 100 to 30 A(ring). A simple theoretical model is used to predict this trend. We show that this technique provides a sensitive measure of the variations in the strain and thickness of quantum wells. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362427
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  • 5
    Electronic Resource
    Electronic Resource
    Correlation between strain fields on the facet and along the cavity in semiconductor diode lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3762-3765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain fields on the facet and along the cavity for both ridge waveguide and oxide stripe geometry lasers were measured. The strain fields were found to be structure dependent across the stripe and essentially uniform along the stripe. A correlation between the strain in the plane of the facet and the strain along the cavity was found. This means that the strain field observed on the facet is representative of the average strain along the device and that facet measurements provide useful information on material properties along the length of the device. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358549
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  • 6
    Electronic Resource
    Electronic Resource
    Strain measurement and estimation of photoelastic effects and strain-induced optical gain change in ridge waveguide lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3382-3387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurement of the strain in the plane of the active region for 1.3 μm InGaAsP ridge waveguide lasers is presented. A strain model is examined and compared with experimental results. The changes in the refractive index and the optical gain owing to the measured strain are estimated. These results are important information for device simulation, modelling, and interpretation of experimental results. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358627
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of scattering on the longitudinal mode spectrum of 1.3 μm InGaAsP semiconductor diode lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 330-332 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scattering of stimulated emission within InGaAsP semiconductor diode lasers has been measured and correlated with the measured spectral output of the lasers. It is found that the spectral output of the diode lasers is strongly dependent on internal scattering. It is also found that the amount of scattering is characteristic of the laser structure. A theoretical model has been developed which demonstrates the effect of scattering on the spectral output, and which explains the differences observed in the spectral output of different structures in terms of the internal scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103681
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  • 8
    Electronic Resource
    Electronic Resource
    Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of polarization of photoluminescence (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3616-3620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature, polarization-resolved photoluminescence from a (001) surface has been used to investigate InP/InGaAs/InP quantum wells grown by gas source molecular beam epitaxy. The degree of polarization of photoluminescence from a (001) surface, DOP001, is a direct measure of the anisotropy of polarization of luminescence between [110] and [11¯ 0] directions. DOP001 is observed to be strongly dependent on the quantum well thickness, composition (strain), and the gas switching time at the growth-interrupted interface. Results show that the anisotropy of polarization may be due to an effect of an anisotropic strain field that is associated with strained bonds at the interfaces of the quantum well. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365479
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  • 9
    Electronic Resource
    Electronic Resource
    Anisotropic interfacial strain in InP/InGaAs/InP quantum wells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5739-5742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical simulations based on a valence force field model have been performed to explain experimental results on the degree of polarization of photoluminescence from the [001] direction of InP/InGaAs/InP quantum wells grown on (001) substrates by gas-source molecular beam epitaxy. The results of the simulations indicate an anisotropic strain field owing to fundamental, growth-related differences between the interfaces of the quantum well. The anisotropic strain field is associated with strained Ga–P, Ga–As, and In–As bonds at the InP/InGaAs/InP interfaces. The results of the simulations are in agreement with measurements of the degree of polarization of photoluminescence from the [001] direction of the quantum wells. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368839
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of stress on threshold, wavelength, and polarization of the output of InGaAsP semiconductor diode lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6631-6638 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of tension and compression applied to unbonded InGaAsP semiconductor diode lasers have been studied. The observed dependence of threshold, wavelength, and polarization of the laser output on the applied stress is explained in terms of the strain dependence of the valence-band wave functions. The polarization behavior is found to be related to thermal stress and the structure of the device. A technique has been developed to measure the thermal stress induced by current heating at the 105-dyn/cm2 level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342045
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