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  • 1
    Electronic Resource
    Electronic Resource
    Efficient synthesis of dl-malyngolide (1982)
    s.l. : American Chemical Society
    The @journal of organic chemistry 47 (1982), S. 4350-4351 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00143a039
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  • 2
    Electronic Resource
    Electronic Resource
    Abnormal junction leakage characteristics in titanium-capped cobalt disilicide (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5293-5295 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Abnormal junction leakage characteristics in titanium-capped cobalt disilicide were investigated. The cobalt silicide n+-p junctions, fabricated with different capping layers, were characterized by current–voltage measurements and transmission electron microscopy. The reverse junction leakage currents of Ti-capped 13.5-nm-thick cobalt disilicide (CT) are higher than those of TiN-capped samples. The activation energy of CT at temperatures below 80 °C is 0.41 eV, and its dominant leakage mechanism is consistent with phonon-assisted tunneling. Transmission electron microscopy analysis indicates the existence of island phases and precipitates located at the silicide/Si interface, which are titanium disilicide and CoxTi1−xSi2 phases, as evidenced by energy dispersive spectroscopy. As a result, for the case of CT, the reasons for higher junction leakage currents and their field dependence appear to be the result of the diffusion of Ti atoms into CoSi2 grain boundaries and the resulting formation of TiSi2 and CoxTi1−xSi2 phases, which gives rise to a rougher silicide interface and a close spacing between silicide and the junction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371513
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  • 3
    Electronic Resource
    Electronic Resource
    Femtosecond dynamics of hydrogen-bonding solvents. Formamide and N-methylformamide in acetonitrile, DMF, and water (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 113-125 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have used optical-heterodyne-detected optical Kerr effect (OHD-OKE) spectroscopy to measure the ultrafast dynamical profile of the amide series formamide (FA), N-methylformamide (NMF), and N,N-dimethylformamide (DMF). We have studied the concentration dependence of binary solutions of FA and NMF using DMF, water, and acetonitrile as cosolvents. Our results show an underdamped librational motion with a period of about 100 cm−1 in both FA and NMF, which also occurs in the binary solutions. The significance of these results for ultrafast chemical reactions in solution is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465790
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  • 4
    Electronic Resource
    Electronic Resource
    Fast responses from "slowly relaxing'' liquids: A comparative study of the femtosecond dynamics of triacetin, ethylene glycol, and water (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 7289-7299 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have measured the ultrafast solvent relaxation of liquid ethylene glycol, triacetin, and water by means of femtosecond polarization spectroscopy, using optical-heterodyne-detected Raman-induced Kerr-effect spectroscopy. In the viscous liquids triacetin and ethylene glycol, femtosecond relaxation processes were resolved. Not surprisingly, the femtosecond nonlinear optical response of ethylene glycol is quite similar to that of water. Using the theory of Maroncelli, Kumar, and Papazyan, we transform the pure-nuclear solvent response into a dipolar-solvation correlation function for comparison with ultrafast electron-transfer reaction rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465710
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  • 5
    Electronic Resource
    Electronic Resource
    Infrared optical properties of SrBi2Ta2O9 ferroelectric thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1771-1773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared optical constants of strontium bismuth tantalate (SBT) ferroelectric thin films have been derived from infrared spectroscopic ellipsometric measurements (2.5–12.5 μm). By fitting the experimental pseudodielectric constants 〈ε1〉 and 〈ε2〉 with a three-phase model (Air/SBT/Pt), the optical constants and thickness of the films have been obtained, and an intrinsic vibrational frequency of the films at 802 cm−1 has also been acquired. The possible contribution to the vibrational frequency has been discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370963
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  • 6
    Electronic Resource
    Electronic Resource
    Evaluation of densities and mobilities for heavy and light holes in p-type Hg1−xCdxTe molecular beam epitaxy films from magnetic-field-dependent Hall data (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4327-4331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The densities and mobilities of heavy and light holes have been simultaneously determined at various temperatures (1.2–300 K) in two molecular beam epitaxy-grown p-type Hg1−xCdxTe (x=0.224) samples from variable magnetic-field Hall measurements. The separation of the contribution from the light hole and heavy hole was achieved by a hybrid approach consisting of mobility spectrum analysis followed by a multicarrier fitting procedure. An acceptor energy level at ∼13 meV above the valence band, as well as various mass ratios of light to heavy holes for different temperature were obtained. In addition, the minority carrier (electron) and the surface two-dimensional electron concentrations and mobilities have also been derived as a function of temperature. The explicit experimental values obtained in this work should be useful to physics and modeling of HgCdTe infrared detectors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368652
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  • 7
    Electronic Resource
    Electronic Resource
    Spectra analysis of annealed Hg1−xCdxTe molecular beam epitaxial films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1376-1378 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter discusses the analysis of infrared and visible spectra of Hg1−xCdxTe thin films deposited by molecular beam epitaxy (MBE) onto a CdTe buffer layer on a GaAs substrate. The spectra were obtained by infrared transmission and spectroscopic ellipsometry. Two mathematical techniques, fast Fourier transform (FFT) of the multiple reflectance spectrum associated with a multilayer system and fractional-derivatives spectra (FDS) were employed. Compared to the conventional fitting procedure, the FFT method directly offers the thickness of individual layers. It can also provide insight into the interfaces. The FDS method, however, gives information of composition and lattice perfection, which is useful in in situ real-time monitoring during the MBE run. The results show that annealing increases the compositional grading of Hg1−xCdxTe MBE films. Furthermore, the crystal microstructure deteriorates due to the irregular arrangement of diffusing atoms in the lattice sites. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122377
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of nitrogen implantation in silicon for shallow p+-n junction formation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1833-1835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter will present the effects of nitrogen implantation on shallow p+-n junction formation in silicon. The p+-n junctions fabricated at different implantation conditions and heat budgets were characterized by secondary ion mass spectroscopy, current–voltage and capacitance–voltage measurements, and analyzed by transport of ions in matter simulation. The capacitance–voltage measurements of nitrogen implanted samples revealed the one-sided abrupt junction properties, and the current–voltage measurements indicated the shallow junction characteristics due to boron diffusion suppression by nitrogen. The activation energy is about 0.39 eV for temperatures below 80 °C, and its dominant leakage mechanism is phonon-assisted tunneling. At a reverse bias of −3 V, the leakage current density was 5.217×10−8 A/cm2 at −3 V, which is comparable to that of a conventional p+-n junction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123684
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  • 9
    Electronic Resource
    Electronic Resource
    Erratum: "Spectra analysis of annealed Hg1−xCdxTe molecular beam epitaxial films" [Appl. Phys. Lett. 73, 1376 (1998)] (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2221-2221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122439
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  • 10
    Electronic Resource
    Electronic Resource
    Characteristics of n+–p junction leakage induced by tantalum pentoxide gate insulator and gate reoxidation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3244-3246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter will present the n+–p junction characteristics in tantalum pentoxide gate dielectric (Ta2O5) and gate reoxidation ambient. The n+–p junctions in n-type metal–oxide–silicon field effect transistor fabricated with different gate dielectrics and post-thermal conditions were characterized by current–voltage measurements. The current–voltage measurements of junction leakage of Ta2O5 gate dielectric without gate reoxidation (MT1) show the hump characteristics due to the precipitates of oxide near the junction depletion regime. And their leakage mechanism is phonon-assisted tunneling, which facilitates the hopping of electrons from the valence band into the shallow attractive Coulomb center via the interface states in the precipitate, leaving holes in the valence band. However, the junction leakage currents of Ta2O5 dielectric with gate reoxidation in hydrogen rich ambient (MT2) are higher than those of thermal oxide samples and their leakage mechanism is Schottky barrier lowering due to the enhanced diffusion of oxygen into the junction depletion region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370983
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