Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 7681-7683
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The formation of amorphous layers in GaAs during ion bombardment at elevated temperatures, where dynamic annealing of radiation-induced defects is substantial, is shown to be extremely sensitive to the implantation temperature. For example, we have found that a temperature change of only 6 °C can change the residual damage from small clusters barely visible by conventional transmission electron microscopy and Rutherford backscattering to a thick amorphous layer. The temperature at which this occurs is strongly dependent upon the ion flux. © 1997 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.365347
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