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  • 1
    Electronic Resource
    Electronic Resource
    Electrical activation of boron coimplanted with carbon in a silicon substrate (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6599-6602 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the electrical activation in B+ (5.0×1014 cm−2 at 50 keV) implanted Si samples submitted to furnace annealing can be noticeably affected by a C+ coimplantation. It was found that a C+ dose ten times lower than that of B+ is not sufficient to influence the activation behavior of B. However, C+ implanted to a dose equal to or ten times higher than the B+ dose contributed, respectively, to the reduction or enhancement of the electrical activation of B after annealing in the temperature range of 450–700 °C. In addition, the reverse annealing of B is attenuated in the coimplanted samples and suppressed in samples where the C+ implantation damage was annealed prior to the B+ implantation. At temperatures (approximately-greater-than)700 °C the electrical activation is not significantly affected by the C+ coimplantation. A model considering interaction between C and Si self-interstitial atoms during thermal annealing is proposed to account for the activation behavior of B in the dually implanted samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355098
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical isolation of n-type and p-type InP layers by proton bombardment (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5343-5347 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where InP is responsible for electron trapping and PIn for the hole trapping. A time dependence of the Rs was observed after each irradiation step to doses of ≅Dth and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200 °C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450–500 °C. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1365063
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  • 3
    Electronic Resource
    Electronic Resource
    Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures: Evidence of ion beam induced annealing (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 42-46 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 4×1017 cm−2 at elevated temperatures have been studied using Rutherford backscattering spectrometry and high resolution x-ray diffraction. The implantation of O or N ions at high temperatures produces two distinct layers in the implanted c-Si: (i) a practically damage-free layer extending from the surface up to (similar, equals) half of the depth of the mean projected range (Rp) and presenting negative strain (of contraction); and (ii) a heavily damaged layer located around and ahead of the Rp with no significant strain. Both the damage distribution and the magnitude of the strain were found to be dependent on the ion species implanted. We proposed that besides the spatial separation of Frenkel pair defects due to the mechanics of the collision processes and the intensive dynamic annealing, an ion beam induced annealing process also participate in the formation of the near-surface damage-free layer during high temperature implantation of c-Si. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330254
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5909-5911 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical activation of In of 18%–52% of the implanted dose (5×1014 cm−2) was obtained in Si samples having a C+ coimplantation after rapid thermal annealing (RTA) at 800–1000 °C for 15 s. This electrical activation yield markedly contrasts with that in samples singly implanted with In in which only ≅0.5% of the dose was activated. The following features were observed in the coimplanted samples: (i) a reverse annealing of the electrical activation in the temperature range of 800–900 °C; (ii) significant reduction of the In profile redistribution during RTA; and (iii) the electrically activated In concentration is substantially higher than the substitutional In concentration. These findings are discussed in terms of the interaction between C atoms and Si self-interstitials (SiI), strain compensation between C and In atoms in the Si lattice, and formation of stable In substitutional–C substitutional acceptors centers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371611
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  • 5
    Electronic Resource
    Electronic Resource
    Damage accumulation in Si crystal during ion implantation at elevated temperatures: Evidence of chemical effects (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8385-8388 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage in Si induced by irradiation with various light/medium mass ions at elevated temperatures and high doses (≥3×1016 cm−2) was studied using Rutherford backscattering spectroscopy, cross-section transmission electron microscopy, and high resolution x-ray diffraction. The results obtained have shown that there is a marked variation in the damage accumulation for different ion species. For O+ and N+ ions a distinct layer with a low level of damage presenting negative strain is formed at the surface. It has been found that the magnitude of the strain does not correlate with the energy deposited in the collision cascades. In the cases of Ne+ and Mg+ implantation, a low damage accumulation occurs near the surface but no negative strain is formed. In contrast to the N+ and O+ cases, with the increase of the Ne+ or Mg+ dose (〉1×1017 cm−2) the damage profile stretches almost to the crystal surface. It is proposed that in addition to the mechanism of spatial separation of Frenkel pairs taking place in the collision cascades, the ability of the implanted ions to form precipitates and complexes with Si atoms noticeably influences the damage formation during implantation at elevated temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373551
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical resistivity of bismuth implanted into silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3453-3455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior is observed as for other n-doped Si, thus confirming the results obtained in the same range of impurity concentration, i.e., ρ(Sb)≤ρ(P)≤ρ(As)≤ρ(Bi). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361393
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  • 7
    Electronic Resource
    Electronic Resource
    Metastable acceptor centers in boron implanted silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3173-3175 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of the electrical activation with the annealing time in B+ implanted (5.0×1014 cm−2, 50 keV) Si was studied as a function of the annealing temperature. Electrical activation yields of 15%–30% were observed after annealing for 2 s at temperatures above 550 °C. Prolonging the annealing time from 2 to 900 s we observed that the electrical activation evolves differently according to the temperature: (i) at 550 °C〈T〈700 °C it decreases toward an equilibrium level, (ii) at 700 °C〈T〈800 °C it decreases during the first minutes and subsequently increases again, and (iii) at temperatures 〈550 °C or T(approximately-greater-than)800 °C it increases continuously. In order to explain the carrier removal observed during annealing at 550–800 °C we proposed that metastable acceptor centers are formed during the B+ implantation and/or the initial period of the annealing time. Interaction of Si self-interstitial atoms with these centers leads to their neutralization and/or dissociation with consequent decreasing of the carrier concentration. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113713
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  • 8
    Electronic Resource
    Electronic Resource
    Enhanced damage accumulation in carbon implanted silicon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3596-3597 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage profiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by 12C+ implantation than by 11B+, especially for doses (approximately-greater-than)2×1015 cm−2. In order to explain our results we suggest that self-interstitial Si atoms are captured by the implanted C atoms, forming complex defects which are stable at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111209
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical isolation in GaAs by light ion irradiation: The role of antisite defects (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 535-537 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied using light mass projectiles like proton, deuterium, and helium ions at various energies. For all the cases, at the beginning of the irradiation, Rs increases with the accumulation of the dose. After reaching ≈109 Ω/(D'Alembertian), Rs saturates, forming a plateau. This plateau is succeeded by a decreasing of Rs with the increase of the dose, denoting that conduction via damage-related mechanisms is taking place. The threshold dose to convert the conductive layer to a highly resistive one at room temperature or at 100 °C is found to scale with the inverse of the estimated number of displaced lattice atoms along the depth of the doped layer. Antisite defects formed by the replacement collisions are invoked to play the major role in isolation formation in GaAs by virtue of their lower sensitivity to dynamic annealing compared to other point defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116391
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical isolation of a silicon δ-doped layer in GaAs by ion irradiation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1917-1919 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical isolation of a n-type δ-doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the δ-doped layer was found to be (approximate)2 times higher than that predicted for thick doped layers of similar carrier concentration. The thermal stability of the isolation, i.e., the persistence of sheet resistance Rs at values 〉109Ω/(square, open) after subsequent thermal annealing, is limited to temperatures below 400 °C. This temperature limit for the thermal stability Tsm is markedly lower than those observed in wider doped layers in which Tsm is ≅650 °C. A previously isolated δ-doped layer presents p-type conductivity after annealing at temperatures 〉600 °C . © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124870
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