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  • 1
    Call number: K 96.0120
    In: Suomen geologinen kartta
    Pages: Zu den meisten Blättern sind Erl. erschienen, Text finn., teilw. engl. Summary
    ISSN: 0786-2814
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3951-3957 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and Raman spectroscopy are employed to explore the time evolution of defect formation in chemical vapor deposition diamond films for stages of growth spanning nucleation to continuous film formation. Our research is concentrated on three types of defects which give rise to the 1.68 eV optical band, the sp2 phase which centers at 1500 cm−1, and the broadband luminescence at 565–800 nm. The investigation of these types of defects suggests the following conclusions. Si atoms are most likely responsible for the creation of the 1.68 eV optical centers which takes place at the initial stages of growth. Plasma interactions with the Si substrate contribute to the 1.68 eV defect formation. The broad luminescence and sp2 bonding defects were not present in the isolated nuclei but were significantly present when a continuous film was formed. Two rates of diamond growth were obtained and the changes of the rates were attributed to the lowering degree of freedom available for the growth of the nuclei as well as to the formation of the sp2 phase.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6400-6405 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface topography of silicon substrates after the initial stages of diamond growth, by microwave plasma enhanced chemical vapor deposition, has been observed by scanning tunneling microscopy. The initial surfaces were polished with diamond paste before deposition to enhance nucleation, and the scratches were examined. After one half hour growth, the surface showed additional topography over all regions, and widely spaced faceted structures were detected which were attributed to diamond nuclei. The surface between nuclei showed increased roughness with increased deposition time. The faceted nuclei were found along the scratches. The nuclei showed facets which were smooth to within 5 A(ring). Fingerlike ridge structures were found extending from and in-between some of the nuclei. These structures indicate a mechanism of the lateral diamond growth. The electronic properties of the surface were probed by local I-V measurements, and characteristics attributable to SiC were observed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 339-346 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time, voltage, and temperature dependencies of transient polarization currents are reported for two types of varistors (i.e., ZnO and a SiC composite). The current transients exhibit a power-law time response to a step change in voltage (i.e., I≈I0/tm, where m is slightly less than unity) that persists over a time scale exceeding 10−8–104 s. The polarization current increases linearly with low applied voltage, but at more than a linear rate for higher voltage. The temperature dependence of the polarization current in medium voltage ZnO varistors is described by an Arrhenius plot with a change of slope near 200 K, which suggests thermal activation energies of about 160 and 10 meV. The time dependence of the polarization currents is confirmed and extended to short times by the ac admittance measured as a function of frequency. Transient changes in the ac admittance accompany the transient polarization currents, and exhibit time and temperature dependencies that reveal their close relationship to the polarization currents. By comparing transient admittance data to predictions of the Mott–Schottky theory of a barrier, it is concluded that the theory gives an inadequate account of the ac conductance, even though the voltage dependence of the capacitance is predicted well. Theoretical explanations of the polarization currents that are based upon a distribution of exponential relaxation times are examined. A reasonable account of the polarization current is provided, but the origin of the distribution is uncertain. Possible origins are a distribution of thermal activation energies or electron hopping among randomly distributed donors.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3020-3027 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman and various photoluminescence (PL) techniques were employed to investigate the role of nitrogen doping on the optical spectra of chemical-vapor-deposited (CVD) diamond films and to determine the origin of the characteristic broadband luminescence which is observed from approximately 1.5 to 2.5 eV and centered at ∼2 eV. The PL transitions attributed to the zero-phonon lines (ZPL) of nitrogen centers are observed at 1.945 and 2.154 eV. A new possible nitrogen center at 1.967 eV is also observed as well as the band A luminescence centered at ∼2.46 eV. The experimental results preclude the possibility of the broadband PL being due to electron-lattice interaction of the nitrogen ZPL centers. We establish the presence of an in-gap state distribution in CVD diamond films attributed to the sp2 disordered phase and show that its optical transitions are the likely cause of the broadband luminescence. A model of the in-gap state distribution is presented which is similar to models previously developed for amorphous materials.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3174-3178 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a wavelength division multiplexed fiber system, where pulses on different wavelength beams may copropagate in a single mode fiber, the cross-phase-modulation (CPM) effects caused by the nonlinearity of the optical fiber are unavoidable. In other words, pulses on different wavelength beams can interact with and affect each other through the intensity dependence of the refractive index of the fiber. Although CPM will not cause energy to be exchanged among the beams, the pulse shapes and locations on these beams can be altered significantly. This phenomenon makes possible the manipulation and control of pulses copropagating on different wavelength beams through the introduction of a shepherd pulse at a separate wavelength. How this can be accomplished is demonstrated in this paper. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6709-6719 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and Raman spectroscopy were employed to investigate the nature and sources of stress and the type and distribution of impurities and defects in thin diamond films grown on silicon substrates. The types of impurities and defects which were detected in the diamond films are the nitrogen, silicon, and the sp2-type bonding of the graphitic phase. Our Raman analyses indicate that the diamond films exhibit a net compressive stress. After compensating for the thermal interfacial stress and for the stress due to grain boundaries it was found that the residual internal stress is compressive in nature. From Raman line-shape analysis it was determined that the internal stress is due to the various impurities and defects present in the film. Moreover, the stress magnitude exhibits a strong correlation with the graphitic phase implying that the sp2 bonding produces a dominant compressive stress field. The PL analytical line-shape investigation of the nitrogen band at 2.154 eV indicates that the nitrogen centers are uniformly distributed in the film. The PL line shape exhibited a close fit to the Lorentzian–Gaussian convoluted line known as the Voit profile. The deconvolution of the line resulted in a dominant Gaussian component, corresponding to stress arising from line type defects, and a much smaller Lorentzian component corresponding to point defect stress. The Gaussian component was attributed to the graphitic phase implying that the sp2 bonding is not in the form of a point defect but rather takes the form of a line or extended defect. The line-shape investigation of the silicon band at 1.681 eV showed that the silicon centers are correlated with the silicon/diamond interfacial stress. Finally, the response of the nitrogen and silicon optical centers to the internal stress, which is manifested via the PL linewidth, was also studied. The silicon band exhibits the narrower linewidth which may indicate that the silicon center complies less to the internal stress than the nitrogen center or that the two optical centers are interacting with different types of stress sources. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 17 (1978), S. 5174-5180 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 16 (1977), S. 4490-4497 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 26 (1996), S. 551-579 
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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