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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 3019-3026 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 246-252 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-of-flight (TOF) direct recoiling (DR) studies of borazine (B3N3H6) decomposition on the Si(100) surface between 100 and 850 °C are reported. The DR method with a grazing incidence angle directly detects the diffusion of light adsorbate elements into sites below the first Si layer, and this migration process is examined here as a function of temperature (T). Submonolayer coverages of coadsorbed B and N atoms (from B3N3H6) occupy subsurface sites after annealing above 550 °C. The B + N results are compared with the well-studied N atom (from NH3) case and limited data for boron from B10H14. The atomic composition of the initial growth surface during thermal chemical vapor deposition (CVD) of boron nitride (BN) from B3N3H6 is surveyed in situ as a function of T using DR in a B3N3H6 flux of 4×1016 molecules cm−2 s−1. Desorption of surface hydrogen plays a central role in controlling both the submonolayer diffusion effects and thermal CVD growth of BN.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4073-4082 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using alternating exposures of Si2H6 and Si2Cl6, very thin Si layers have been grown on the Si(100) surface at temperatures (T) as low as 475 °C. Although this growth method is not truly self-limiting, some of the desired features for Si atomic layer epitaxy (ALE) are retained, as discussed here. The growth rate of new Si on Si(100) using this method is limited by the thermal desorption of H2 and HCl. Doping the surface with boron atoms can lower the growth temperature, due to a weakening of the Si—H and Si—Cl bonds on the surface as observed in the temperature programmed desorption results from H2, HCl, and SiCl2 desorption from the clean and the boron-doped Si(100) surfaces.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 7609-7614 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Chemisorption of hexafluoroazomethane on Si(111) was studied with synchrotron photoemission as a model system for studies of halocarbon-based etching. C 1s, N 1s, and F 1s core level spectra were collected for various room temperature exposures of clean silicon to hexafluoroazomethane, and after mild annealing. The initial reaction of hexafluoroazomethane with silicon is shown to be quite complex, resulting in the formation of many adsorbed dissociation products. Annealing resulted in the desorption and decomposition of these species. These results demonstrate the buildup of a passivating carbon layer on the silicon samples, which may be responsible for the inability of CFx radicals to etch silicon effectively.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 7493-7503 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Silane adsorption at a surface temperature of 150 K and the surface decomposition of SiH3 and SiH2 have been investigated on the Si(100)-(2×1) surface using static secondary ion mass spectrometry (SSIMS) and temperature programmed desorption (TPD). Silane dissociatively chemisorbs at 150 K to form SiH3 and H. At saturation, the combined coverage of these two is approximately 0.4 groups/1st layer Si atom (0.2 SiH4 adsorbed/1st layer Si atom). Using SiH4, the surface coverage of SiH3 species is varied, and the coverage-dependant kinetics of SiH3 decomposition are examined using temperature programmed SSIMS. Changes in SiH4 exposure and source of SiH3 (di- vs monosilane) cause changes in surface SiH3 stability. The stability changes are interpreted as due to blocking of empty sites (dangling bonds, db) required for SiH3 decomposition to SiH2 and H. It is shown here that the decomposition temperature of SiH3 can vary from 200 to 600 K, depending on the dangling bond coverage (θdb). Subsequently, evidence for a coverage dependant change in the decomposition mechanism of SiH2 is presented. Two mechanisms for SiH2 decomposition are experimentally distinguished, and competition of these is governed by θdb. We conclude that both the mechanism and rate of decomposition of surface SiH3 and SiH2 are dependant on the local surface environment near these species.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 3144-3153 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using static secondary ion mass spectrometry (SIMS) to observe the silicon hydride species formed by silane adsorption on atomically clean single crystal silicon surfaces, two distinct adsorption mechanisms are identified. Dissociation to SiH3 plus H occurs on the Si(100)-(2×1) surface, which contains pairs of dangling bonds located on Si dimers (with Si–Si distance ≈2.4 A(ring)). In contrast, SiH2 formation in the adsorption step is indicated on the Si(111)-(7×7) surface, where adjacent dangling bonds are separated by more than 7 A(ring). Lower limits on the silane reactive sticking coefficient (SR) are evaluated using hydrogen coverage (aitch-thetaH) measurements after calibrated SiH4 exposures, and this limit is ≈10−5 for 25 °C gas and 100–500 °C surface temperatures. Within experimental error, SR is the same for both mechanisms on the two clean surfaces (aitch-thetaH near zero). Dependence of SR on aitch-thetaH is reported at 400 °C for both surfaces, and differences appear as aitch-thetaH exceeds 0.1 H/Si. Silane adsorption is weakly activated on Si(111)-(7×7), as evidenced by enhanced adsorption as TS is increased between 50 and 400 °C.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1802-1804 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adsorption of SiClH3 and SiCl2H2 on Si(100) is studied as a function of surface temperature, comparing these precursors for Si atomic layer epitaxy (ALE). At 450–550 °C, a substantial surface H coverage (θH) exists during SiClH3 adsorption, and θH exhibits transient behavior. During SiCl2H2 adsorption, θH is much smaller. At 500 °C with SiCl2H2, (approximately-equal-to)1 monolayer of Cl is formed after (approximately-equal-to)4×1019 cm−2 exposure. Dichlorosilane is a suitable precursor for Si ALE, but desorption of HCl is significant at T(approximately-greater-than)500 °C so that SiCl2H2 adsorption is not strictly self-limiting.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Chemistry of materials 1 (1989), S. 16-18 
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 41 (1985), S. 669-671 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 10
    Publication Date: 1989-01-01
    Print ISSN: 0897-4756
    Electronic ISSN: 1520-5002
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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