ISSN:
1573-4889
Keywords:
high-purity aluminum thin films
;
in situ electron microscopy
;
in situ evaporation
;
in situ oxidation
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The authors studied the oxidation of thin aluminum films free of oxide layers in situ prepared by evaporation directly in the electron microscope under ultra-high-vacuum conditions. The oxidation was realized at various temperatures (350–500°C) and at various oxygen pressures (1–10−3 Pa). The formation and growth of the amorphous and crystalline products have been studied.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00603669
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