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  • 1
    Electronic Resource
    Electronic Resource
    KrF laser-induced ablation and patterning of Y–Ba–Cu–O films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2512-2514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ablation and patterning of Y–Ba–Cu–O films on (100) SrTiO3 and (100) MgO substrates by KrF excimer-laser light projection was investigated. Three different regimes of laser-material interactions were observed. Transition temperatures and critical current densities in laser-fabricated strip lines were investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346519
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of the beam spot size on ablation rates in pulsed-laser processing (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2054-2055 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ablation rates in pulsed-laser processing depend heavily on the laser beam spot size. This has been observed for the first time for a number of different materials. Detailed investigations on this effect, performed by means of XeCl excimer-laser radiation and the example of LiNbO3, are reported in this letter. With this material, the ablation rate at constant fluence saturates at laser beam spot sizes of 2w(approximately-greater-than)80 μm and increases by about a factor of 3 when 2w is decreased to 24 μm. The effect is interpreted as being due to changes in the material transport which depend on the size of the region being processed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98290
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  • 3
    Electronic Resource
    Electronic Resource
    Modeling of pyrolytic laser direct writing: Noncoherent structures and instabilities (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1018-1025 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three-dimensional simulations of pyrolytic laser direct writing from gas-phase precursors are presented. They are based on a fast method for the calculation of temperature distributions induced by an energy beam in deposits of arbitrary shape. Analytical approximations, fast Fourier transform, and the multigrid technique are combined in the algorithm. Temperature dependences of the absorptivities and heat conductivities of the deposit and the substrate have been taken into account. Self-consistent modeling of the growth process allows one to explain oscillations in the height and width of lines caused by the feedback between the shape of the deposit, the temperature distribution, and the growth rate. For the deposition of W from an admixture of WCl6+H2 and a-SiO2 substrates, the oscillations originate from a sharp increase in the absorptivity of the deposit with temperature. With the deposition of Si from SiH4, or C from CH4, C2H2, and C2H4, onto a-SiO2, the oscillations are related to the large ratio of height/width of the deposit and the increase in temperature on its upper surface. This increase also explains the transition from line-type to fiber-type growth. The hysteresis of this transition with respect to laser power and scanning velocity is explained as well. The same algorithm can be used in the modeling of pyrolytic etching and e-beam microprocessing when the feedback between the temperature distributions and changes in the processing geometry is important. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365865
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  • 4
    Electronic Resource
    Electronic Resource
    Excimer-laser-induced etching of ceramic PbTi1−xZrxO3 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1511-1514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etching of ceramic PbTi1−xZrxO3 (PZT) by XeCl excimer laser radiation has been investigated. In air, the threshold fluence for etching was about 2 J/cm2. At fluences of 10 J/cm2, etch rates of 0.1 μm/pulse were observed. The geometry of etched structures can readily be defined by choosing suitable experimental conditions, suggesting potential applications of this process to the production of devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339613
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  • 5
    Electronic Resource
    Electronic Resource
    Kr+ laser-induced chemical vapor deposition of W (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 673-675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Kr+ laser-induced pyrolytic direct writing of W stripes by H2 reduction of WF6 has been investigated. The reproducibility of the process and the morphology and electrical properties of deposits depend heavily on the partial pressures of both WF6 and H2; the best results have been obtained with p(WF6)=5 mbar and 100 mbar≤p(H2)≤800 mbar. For a laser focus of 2w0=7 μm and laser powers between 30 and 200 mW, the widths of stripes varied between 1.5 and 15 μm with corresponding thicknesses between 0.1 to 3 μm. The width of stripes is independent of the scanning speed within the range 20 μm/s≤Vs ≤400 μm/s. The electrical resistivities of these stripes were about a factor of 1.3–2.3 larger than the bulk value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339767
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  • 6
    Electronic Resource
    Electronic Resource
    Enhancement of Josephson photoresponse of granular high-Tc superconductor thin films by deoxygenation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2827-2829 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the far infrared Josephson photoresponse of current biased granular high-Tc superconductor thin films on deoxygenation is presented. Bi2Sr2CaCu2O8 and TlBa2Ca2Cu3O9 thin films were heated in vacuum to temperatures of between 200 and 500 °C. The resulting deoxygenation weakens the intergrain coupling, thereby reducing the critical current and enhancing the photoresponse. In this way the optimum temperature for the fast Josephson response may be tuned to lie outside the temperature region of the slow bolometric signal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110300
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  • 7
    Electronic Resource
    Electronic Resource
    In situ fabrication of superconducting Lu-Ba-Sr-Cu-O films by pulsed-laser deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2023-2025 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin superconducting films of single phase LuBa2Cu3O7 and LuBaSrCu3O7 have been synthesized by means of laser sputtering. The films show zero resistance at 90 and 54 K, respectively. The critical current density found with LuBa2Cu3O7 films at 83 K is in excess of 106 A/cm2. The synthesis of these materials by standard solid-state reactions has not yet been achieved successfully.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107131
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  • 8
    Electronic Resource
    Electronic Resource
    Single-pulse ultraviolet laser-induced surface modification and ablation of polyimide (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 847-849 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-pulse laser ablation of polyimide was investigated by using focused UV-Ar+-laser radiation (λ(approximate)302 nm, 140 ns≤τl≤50 ms) and atomic force microscopy. The results clearly demonstrate that the ablation rates do not depend on the total dose only, but depend as well on the duration of the laser pulses, τl. The experimental results can be interpreted almost quantitatively on the basis of a purely thermal model. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122021
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  • 9
    Electronic Resource
    Electronic Resource
    Etching of crystalline Si in Cl2 atmosphere by means of an optical fiber tip (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 159-161 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experiments on laser-induced chemical etching of silicon in chlorine atmosphere using a near-field optical configuration. Crystalline (100) Si surfaces were locally illuminated in 300 mbar Cl2 through a tapered fiber tip. In most of the experiments, we used UV argon ion laser lines around 350 nm for illumination. The etched samples were analyzed by means of atomic force microscopy. Patterns with a width of 140 nm at full width half maximum and a vertical etch rate of the order of 15 nm/s have been achieved. Comparison of etching with a visible wavelength at intensities that cannot cause surface melting shows that the etching is primarily a photophysical process. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1369415
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  • 10
    Electronic Resource
    Electronic Resource
    In-plane and out-of-plane resistivities of vicinal Hg-1212 thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1369-1371 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vicinal Hg1−x Rex Ba2CaCu2O6+δ films have been grown on tilted (001)SrTiO3 substrates. The c axis of films is oriented in parallel to the c axis of the substrate for tilt angles up to 12°. The vicinal films show a step-like surface morphology with smooth terraces that are tilted with respect to the substrate surface. The in-plane and out-of-plane resistivities ρab and ρc reveal metallic behavior with a slight upturn near Tc for the latter. The resistivity anisotropy derived from these measurements is ρc/ρab∼650±150 at 300 K. This value is between that found for YBa2Cu3O7−δ and the Bi-based cuprates, and it increases with decreasing temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289489
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