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  • 1
    Electronic Resource
    Electronic Resource
    Optical investigation of the two-dimensional hole energy spectrum in GaAs/AlxGa1−xAs heterojunctions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7775-7779 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of optical studies on the energy spectrum of a two-dimensional hole gas (2DHG) in a GaAs/AlxGa1−xAs structure. The photoluminescence (PL) line shape in the 2DHG is investigated as a function of temperature by heating the holes by a current flow through the 2D hole channel. The line shape of the PL from the 2DHG as a function of temperature is calculated by taking into account the real band structure and the hole–hole final-state interaction. By comparing experiment and theory, it is found that the special features of the band structure predicted theoretically explain the experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353982
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  • 2
    Electronic Resource
    Electronic Resource
    Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5097-5102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of biaxial strain on optical phonons in high-quality GaN epitaxial layers grown on 6H–SiC substrates by metal organic chemical vapor deposition has been studied. The deformation potential constants for the E2(1), A1(TO), E1(TO), and E2(2) optical phonon modes in hexagonal GaN have been obtained. A method for calculating strain in hexagonal GaN layers from Raman data alone is suggested. A comparative analysis of the strain measured by x-ray diffraction and Raman spectroscopy shows that these data agree well. It is found that the biaxial stress of 1 GPa results in a shift of the excitonic photoluminescence lines of 20±3 meV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366310
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  • 3
    Electronic Resource
    Electronic Resource
    Polarization anisotropy in optical reflection spectra of structures with open nanowires (1999)
    Springer
    Semiconductors 33 (1999), S. 985-987 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The optical reflection spectra of structures with open nanowires created from ZnCdSe/ZnSe heterostructures are investigated. A significant polarization anisotropy of the reflection is observed over a wide spectral range, including the exciton resonance regions of the wire, the barrier, and the substrate. The effect of additional laser pumping on the reflection spectrum is examined. The observed effects are interpreted in terms of a model of an effective anisotropic layer. A numerical simulation of the reflection spectra based on this model is in good qualitative agreement with experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187819
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  • 4
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of porous gallium arsenide (2000)
    Springer
    Semiconductors 34 (2000), S. 732-736 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Photoluminescence (PL), Raman scattering, and carrier transport have been studied for the first time in porous GaAs prepared on (111) oriented wafers of n-type crystalline GaAs (faces A and B). Peaks of the main PL band from faces A and B were observed at 1.82 and 1.88 eV, respectively. The electron drift mobility was found to be ∼4×10−4 cm2 V−1 s−1. The nanocrystallite size in porous GaAs was determined both from PL spectra and from the Raman shift. The obtained values are close or equal to 6–8 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188063
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  • 5
    Electronic Resource
    Electronic Resource
    Quantum corrections to 2D hole conductivity in a quantum well on $$(10\bar 10)$$ (1998)
    Springer
    Physics of the solid state 40 (1998), S. 1409-1412 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The anomalous positive magnetoresistance of a two-dimensional (2D) layer on Te $$(10\bar 10)$$ is analyzed, and it is shown that this phenomenon can be described within the weak localization theory taking into account the specific features of the band spectrum symmetry of a 2D layer on this tellurium surface and the associated peculiarities in the phase relaxation processes, as well as the existence of several 2D subbands. The main parameters of the theory have been determined, and it has been found that this orientation of the 2D layer is characterized by an extremely high probability of intersubband transitions in elastic scattering, which makes this case qualitatively different from the 2D hole system on the (0001) surface studied previously. The phenomenon is attributed to the difference in the character of electronic states between these crystal interfaces, namely, dangling covalent bonds in the chains making up the tellurium crystal on the (0001) surface, and the disruption of the weaker interchain Van der Waals bonds on the $$(10\bar 10)$$ face representing the cleavage surface. A conclusion is drawn that the wave-state phase-relaxation time in inelastic processes is dominated by electron-electron scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130571
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  • 6
    Electronic Resource
    Electronic Resource
    Electric-field and interface effects on the orientation of Jahn-Teller vacancy distortions in semiconductors (1998)
    Springer
    Physics of the solid state 40 (1998), S. 1958-1961 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Energy variation of various Jahn-Teller vacancy configurations in thin near-surface layers of a semiconductor is considered. The calculations are made within a model in which each dangling bond near a vacancy is described by the wave function of an electron localized at a defect with a zero-range potential. The Jahn-Teller stabilization energy was assumed to be much smaller than the crystal-field splitting but substantially larger than the energy variations introduced by other perturbations. It is shown that vacancy alignment in semiconductor layers with thickness ⩾100 Å at liquid-nitrogen temperatures and lower can be most effectively caused by the electric field which can exist in such layers due to a surface-state charge. The direct effect of the interface on both the electronic and nuclear energies of various configurations is weak and can become manifest only in layers less than 10 Å thick at liquidhelium temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130713
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  • 7
    Electronic Resource
    Electronic Resource
    Weak localization with a specific role of t symmetry (2D and 3D holes in tellurium) (1999)
    Springer
    Physics of the solid state 41 (1999), S. 796-798 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The anomalous magnetoresistance in crystalline tellurium is analyzed for different p-type carrier dimensions: a bulk sample, size-quantized accumulation layers on different tellurium crystallographic surfaces, and tellurium clusters (tellurium embedded in a dielectric opal matrix). It is shown that the effect can be interpreted in all cases in terms of the theory of weak localization of noninteracting particles with inclusion of the specific features of the tellurium band spectrum, namely, fully lifted spin degeneracy, trigonal spectrum distortion, and a specific role played by the t symmetry in inter-valley scattering. The differences observed among the various manifestations of the weak localization effect are determined by the hole wave function phase-relaxation channel which is dominant in a particular case. A case is discussed where the time characterizing the inter-valley transition probability becomes comparable to the momentum relaxation time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1131086
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  • 8
    Electronic Resource
    Electronic Resource
    Weak localization in semiconductor structures with strong spin-orbit coupling (1998)
    Springer
    Journal of experimental and theoretical physics 86 (1998), S. 780-789 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A theory of weak localization is constructed for p-type semiconductor structures with a complex Γ8 valence band. An equation for the Cooperon is obtained and solved in the case when spin relaxation cannot be treated as a perturbation. The anomalous magnetoresistance is calculated in bulk samples as a function of the external deformation and in quantum wells as a function of the doping level. The results of the theory are represented in a form that allows direct comparison with experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558539
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  • 9
    Electronic Resource
    Electronic Resource
    Quasi-two-dimensional Shubnikov-de Haas effect (2000)
    Springer
    Journal of experimental and theoretical physics 90 (2000), S. 360-362 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The theory of the Shubnikov-de Haas effect is generalized to the case of two-dimensional systems with several occupied size-quantization subbands. Possible interlevel scattering is taken into account. It is shown that the relative amplitudes of the Shubnikov-de Haas oscillations are determined not only by the occupancy of the subbands but also by the intensity of intersubband transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.559111
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  • 10
    Electronic Resource
    Electronic Resource
    Weak localization in p-type quantum wells (1998)
    Springer
    Semiconductors 32 (1998), S. 1087-1095 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A weak-localization theory is derived for quantum heterostructures with strong spin-orbit interaction that predicts anomalous magnetoresistance. This theory treats real quantum wells with a few occupied quantum-well subbands. It is shown that in the presence of intense elastic transitions between these subbands the parameters that define the conductivity in classically weak magnetic fields are averaged efficiently. In the opposite limiting case, all the subbands give independent contributions to the anomalous magnetoresistance. Relevant characteristic magnetic fields are calculated for arbitrary ratios between the times for phase breaking and intersubband transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187574
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