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  • 1
    Electronic Resource
    Electronic Resource
    Growth of YbSb2/GaSb(001) and GaSb/YbSb2/GaSb(001) heterostructures by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6632-6635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful growth by molecular beam epitaxy of YbSb2 (010) single crystal films on GaSb(001) has been demonstrated. The YbSb2 films have a room temperature resistivity equal to 40 μΩ cm. YbSb2 has a basal plane rectangular (but almost square) and nearly lattice matched to GaSb. The memory of the GaSb(001) surface orientation is transferred to the YbSb2 surface films, avoiding the formation of inversion domains in the GaSb overlayers. The effects of the lattice mismatches in the basal plane and in the growth direction are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355104
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  • 2
    Electronic Resource
    Electronic Resource
    ErSb/GaSb(001) and GaSb/ErSb/GaSb(001) heterostructures and [ErSb,GaSb] superlattices: Molecular beam epitaxy growth and characterization (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2876-2883 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful growth of ErSb(001) single crystal layers on GaSb(001) substrates has been demonstrated. The reflection high-energy electron diffraction patterns show a (4×4) surface reconstruction. Reflection high-energy electron diffraction oscillations, x-ray diffraction, and Rutherford backscattering with channeling indicate single crystal monolayer-by-monolayer growth and continuity of the Sb sublattice at the ErSb/GaSb interface. The ErSb has a low room temperature resistivity equal to 30 μΩ cm but may be used as a metallic reflector only for wavelengths greater than 2.4 μm. The overgrowth of GaSb on ErSb leads to mirrorlike surfaces but the overlayers contain symmetry-related defects. On the contrary, nearly perfect GaSb overlayers were grown on [ErSb,GaSb] superlattices which exhibit metallic behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356181
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  • 3
    Electronic Resource
    Electronic Resource
    Smooth, pseudosmooth, and rough GaAs/AlxGa1−xAs interfaces: Effect of substrate misorientation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2605-2607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlxGa1−xAs quantum well and superlattice structures have been grown at 600 °C by molecular beam epitaxy on GaAs (001) substrates exactly oriented or slightly misoriented towards (111) Ga and (111) As. It is shown that for the growth conditions used, the step orientation (nature) has a striking influence on the photoluminescence (PL) features of the grown structures: steps along [1¯10] (Ga-type steps) lead to sharp PL lines (pseudosmooth interfaces), while a considerable broadening of the PL (rough interfaces) is obtained when the steps are along [110] (As-type steps).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101967
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  • 4
    Electronic Resource
    Electronic Resource
    Band discontinuities and calculations of GaAs-AlGaAs superlattice structures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3835-3840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first two optical transition energies of GaAs-Ga(Al)As superlattices and multiquantum wells with small well widths are quite sensitive to the band discontinuity. On a series of samples the parameters of which are determined by x-ray diffraction, we compare the energies measured in photoluminescence and photoluminescence excitation spectroscopies with the results of calculations within the framework of the envelope function approach and with the simple Kronig–Penney model. The envelope function approximation models give transition energies systematically smaller than the experimental values and the discrepancy increases when the well width decreases. With the Kronig–Penney model, both excitonic transitions are satisfactorily calculated for each sample with a conduction-band offset around 75%, but we do not find a unique value of the conduction-band offset for all samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337039
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  • 5
    Electronic Resource
    Electronic Resource
    Double-crystal x-ray investigations of semi-insulating (Ga,Fe) double-doped InP substrates (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1904-1909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report further x-ray double-crystal diffractometry experiments on the structural perfection of the semi-insulating (Ga, Fe) double-doped LEC-grown InP substrates. Series of x-ray reflection topographs were taken at different settings on the rocking curves using the double-crystal arrangement in parallel setting. Variations in lattice-plane spacings and lattice-plane orientations induced by Ga inhomogeneity were determined. (In, Ga)As layers grown by molecular-beam epitaxy on (001) oriented (Ga,Fe) double-doped InP substrates were also characterized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339890
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray diffraction study of intentionally disordered GaAlAs-GaAs superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 456-460 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of six intentionally disordered GaAlAs-GaAs superstructures grown by molecular-beam epitaxy has been investigated using x-ray diffraction techniques. Experimental diagrams show unusual effects increasing with disorder: only nonzero-order satellites are really affected by this kind of disturbance. A mathematical model directly derived from the basic scattering expression is described. By means of this model, which requires for numerical applications the knowledge of the growth sequence, we calculate the diffraction profile of each sample and find a very good agreement with the experiments. We discuss the effect of some changes in the growth sequence and finally show that this model can be used in the general case to take into account the interface roughness or the presence of enlarged wells in ordered superstructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339821
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  • 7
    Electronic Resource
    Electronic Resource
    Comparative study of interface structure in GaAs/AlAs superlattices grown by molecular beam epitaxy on (001) GaAs substrates misoriented towards (111)Ga or (111)As plane (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2406-2408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface morphology of GaAs/AlAs superlattices grown by molecular beam epitaxy on (001) misoriented GaAs substrates has been investigated using high-resolution transmission electron microscopy observations. We show that the misorientation towards (111)Ga or (111)As plane leads to the same interfacial structure: monolayer height steps and terrace width variations are observed. But the results reveal that the misorientation towards the (111)Ga plane is the most favorable to a regular growth of superlattice structures, because the higher degree of correlation between the interfaces resulting from a smoothing of step edges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106987
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  • 8
    Electronic Resource
    Electronic Resource
    Direct probing of electron movement in superlattices by subpicosecond luminescence (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2168-2170 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertical transport in GaAs/AlGaAs superlattices is probed in structures with graded composition. Such structures allow both to impose a quasi electric field to the carriers and to evidence the carrier movement by the temporal changes in the luminescence line shape. The fit of this line shape by a drift-diffusion model gives the transport properties of electrons. High mobility of the electrons is evidenced for the shortest period superlattices, in agreement with previous optical measurements. The importance of the transfer to the satellite valleys and of the finite capture time in the large well included as a marker are evidenced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106117
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  • 9
    Electronic Resource
    Electronic Resource
    Some aspects of the X-ray structural characterization of (Ga1−xAlxAs)n1(GaAs)n2/GaAs(001) superlattices (1984)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 17 (1984), S. 196-205 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The study of the physical properties of the superlattices (Ga 1− xAlxAs)n1(GaAs)n2/GaAs(001) requires the knowledge of their structural parameters n1, n2 and x and of their crystalline state. X-ray diffraction enables the existence of such artificial superstructures, obtained by molecular-beam epitaxy, to be revealed and their characteristic parameters to be determined. Two experimental techniques are used: a standard powder goniometer and a double-crystal diffractometer. The diffraction diagrams directly yield the superperiod and the average Al concentration in the superlattice. The value of x is determined by refinement between observed and calculated structure factors. The results are even more accurate when the number of observed satellite peaks for a given periodicity is greater; this number depends at the same time on the Al composition x, the n1/n2 ratio, the periodicity and its dispersion and the shape of the interfaces. This method is illustrated by a few examples with superlattice periods varying from 51 to 397 Å. The consequence on the X-ray diagrams of various defects (dispersion in n1 and n2, superperiod gradient, Al diffusion) is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889884011286
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  • 10
    Electronic Resource
    Electronic Resource
    Imperfections in (Ga1−xAlxAs)n1–(GaAs)n2/GaAs supperlattices as observed by X-ray diffraction techniques (1987)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 20 (1987), S. 111-116 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Growth imperfections in (Ga1−xAlxAs)n1–(GaAs)n2/ GaAs superlattices, grown on GaAs(001) substrates, have been investigated by X-ray diffraction techniques coupling image and rocking-curve recording. The use of a synchrotron radiation source has enabled topographic images formed with very weak superlattice reflections to be obtained. The intensity distribution across the sample surface observed in such images has revealed two different types of superlattice defects: either overall gradients of both the average composition and period or islands showing different composition and period from the surrounding material. Since these parameters control the optoelectronic properties and particularly the gap value it is of primary importance to grow homogeneous samples and to have a technique able to detect inhomogeneities such as the ones described in the present work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889887087041
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