ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
GaInAsP/InP strain-compensated five-layered quantum-wire lasers with the wire width of 23 nm were fabricated by electron-beam lithography, CH4/H2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth, and the quality of the etched/regrown interface was evaluated from the spontaneous emission efficiency dependence on the active region width in comparison with that of unetched quantum-well lasers. As a result, the product of the surface recombination velocity and the carrier lifetime at the etched/regrown interface was estimated to be less than 3 nm at room temperature. Finally, no noticeable degradation in the spontaneous emission efficiency of this quantum-wire laser was observed within measurement temperature from 25 °C to 85 °C. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1497995
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