Publikationsdatum:
2017-09-19
Beschreibung:
Author(s): Takuya Ozaki, Mitsuru Funato, and Yoichi Kawakami Observed temperature-induced peak shifts in photoluminescence (PL) originating from In x Ga 1 − x N single quantum wells grown on semipolar ( 11 2 ¯ 2 ) GaN bulk substrates are discussed in terms of a numerical exciton hopping model based on the Monte Carlo method. The experimentally observed PL peak shifts ca... [Phys. Rev. B 96, 125305] Published Mon Sep 18, 2017
Schlagwort(e):
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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