ISSN:
1432-0630
Schlagwort(e):
81.40.Cd
;
85.60.Gz
;
72.20.Ht
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract GaAs and InGaAs epitaxial layers were grown by Metal-Organic Chemical Vapor Deposition at Low substrate Temperatures (LT-MOCVD). The layers, grown at temperatures below 430° C were semi-insulating. Transmission electron microscopy images reveal uniformly distributed 3–10nm size clusters which consist, most probably, of zinc. Photodetectors fabricated from those layers feature nonlinear photocurrent versus optical power dependence. The nonlinearities are explained in terms of electric field redistribution. The nonlinear photoconductive correlation measurements show that excess carrier lifetimes are in the range of 20–50 ps.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00332175
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