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  • 1
    Digitale Medien
    Digitale Medien
    Thermal stability and dopant drive-out characteristics of CoSi2 polycide gates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4712-4714 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: BF2-implanted CoSi2 polycide gates that are stable at high temperatures up to 1000 °C have been fabricated. The use of CoSi2 polycide as a boron diffusion source was evaluated using a metal-oxide-semiconductor capacitor structure on a p-type Si substrate. This structure is useful in monitoring the diffusion of the electrically activated dopants from the silicide towards the polycrystalline silicon-SiO2 interface. Our results show that using BF2-implanted CoSi2 as a diffusion source is effective in doping polycrystalline silicon gates degenerately without any degradation of the polycide resistivity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352743
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  • 2
    Digitale Medien
    Digitale Medien
    Improvement of ultrathin gate oxide and oxynitride integrity using fluorine implantation technique (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 37-39 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of fluorine on ultrathin gate oxide and oxynitride (∼40 Å) have been studied. The incorporation of fluorine was done by fluorine ion implantation into polycrystalline silicon (polysilicon) gate followed by a high-temperature drive-in step. It has been found that the integrity of oxide has been improved with the incorporation of fluorine as demonstrated by the reduction of stress-induced leakage current and interface trap generation. Furthermore, unlike thicker dielectrics (〉100 Å) for which the charge-to-breakdown (QBD) values decrease with increasing fluorine concentration, QBD's remain the same as those of the control samples for the ultrathin thickness regime. The mechanism for oxide quality improvement by F will also be discussed in the letter. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119297
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  • 3
    Digitale Medien
    Digitale Medien
    Optimization of gate dopant concentration and microstructure for improved electrical and reliability characteristics of ultrathin oxides and N2O oxynitrides (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 934-936 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We study the effects of gate dopant species (boron, arsenic, or phosphorous) concentration (1×1019 cm−3–1×1021 cm−3) and microstructure (as-deposited amorphous or polycrystalline silicon gate) on the electrical and reliability characteristics of ultrathin oxides and N2O oxynitrides (60 A(ring)). In order to minimize polysilicon depletion, a high gate dopant concentration is desirable. However, for devices with BF2 doped gates, it is found that because of boron penetration through the thin gate oxide, device characteristics degrade as the gate doping concentration increases, thus an intermediate gate doping must be chosen. In contrast, samples with arsenic and phosphorous doped gates show no degradation as the doping level increases. Optimization of gate microstructure for N2O and O2 dielectrics is also discussed. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116948
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  • 4
    Digitale Medien
    Digitale Medien
    Improved ultrathin oxynitride formed by thermal nitridation and low pressure chemical vapor deposition process (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1790-1792 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this letter, we will present the electrical and reliability characteristics of ultrathin oxynitrides (65–73 A(ring)) formed by thermal nitridation of silicon substrate followed by deposition of silicon dioxide by low pressure chemical vapor deposition (LPCVD) technique. The dielectric integrity has been compared to those of the conventional thermal oxide and reoxidized nitrided oxides. It has been found that the new oxynitrides have lower electron trapping, higher charge-to-breakdown, and lower interface state generation under electrical stress even in comparison to reoxidized nitrided oxides with the same thermal budget. The improved characteristics are believed to be due to the combination of the nitrogen-rich layer at the Si/SiO2 interface, the higher quality of LPCVD oxides over thermally grown oxides, and the reduced hydrogen concentration in the dielectrics in comparison to conventional nitrided oxides. The results indicate that these new oxynitride films may be promising for ultra large scale integrated metal-oxide-semiconductor device applications, especially in cases where low thermal budget processes are desirable.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.108428
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  • 5
    Digitale Medien
    Digitale Medien
    Electrical characteristics of oxynitrides grown on textured single-crystal silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 445-447 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electrical characteristics of oxynitrides grown on textured single-crystal silicon are discussed in this letter. This study compares the I-V, C-V, charge trapping, interface state generation, and breakdown characteristics of this new gate dielectric with those of oxides and oxynitrides grown on untextured silicon, and oxides grown on textured silicon. Textured oxynitrides were found to have enhanced conduction and significantly reduced interface state generation. Furthermore, they exhibit an improved immunity to charge trapping under high-field stress, and a significantly higher charge-to-breakdown QBD compared to the textured oxides. These properties make the textured oxynitride a promising gate dielectric for applications in electrical-erasable programmable read-only memories (EEPROMs).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106629
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  • 6
    Digitale Medien
    Digitale Medien
    Novel process for reliable ultrathin tunnel dielectrics (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2102-2104 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new process technique, referred to as the "oxidized-nitrided silicon (ONS),'' was developed for producing ultrathin (≤50 A(ring)) dielectrics. Metal-oxide-semiconductor capacitors were fabricated using this novel process to investigate the dielectric quality. It was found that devices with ONS dielectrics exhibit reduced charge trapping and improved interface-state generation characteristics. The stress-induced leakage current, which is one of the major concerns for ultrathin dielectrics, was also suppressed by employing the ONS dielectrics. In addition, precise thickness control can be easily achieved by the ONS process even down to the ultrathin regime. The results suggest that this novel ONS process can synthesize reliable tunnel dielectrics suitable for memory applications.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111696
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  • 7
    Digitale Medien
    Digitale Medien
    Memory effects of silicon-implanted oxides for electrically erasable programmable read-only memory applications (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1530-1532 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The memory effects of silicon-implanted oxides are reported in this letter. Due to the trap-like characteristics of the implanted silicon, hysteresis capacitance-voltage loops have been measured after voltage pulse stressing. A positive voltage pulse leads to a positive shift of the capacitance-voltage curve, while a negative voltage stress results in a negative drift. It was found that using these Si-implanted oxides, writing/erasing operations of electrically erasable programmable read-only memories could be realized by applying short voltage pulses (e.g., 100 ns, ±12–16 V). Moreover, excellent retention characteristics were also detected for these memory devices. The implanted silicon alters the conduction mechanism such that the I-V behavior does not follow the Fowler–Nordheim tunneling. The implantation process did not yield noticeable degradation to the oxide quality; and a lifetime over 10 yr can be achieved even with ±16 V stressing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.108630
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  • 8
    Digitale Medien
    Digitale Medien
    Surface cleaning effect on dielectric integrity for ultrathin oxynitrides grown in N2O (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1133-1135 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this study, we developed a wafer-cleaning procedure for ultrathin dielectric growth. This involves a modified RCA clean, a dilute-HF dip and a subsequent immersion in methanol/HF solution. Ultrathin (≈42 A(ring)) oxynitride films were grown in pure N2O using this new cleaning procedure and some other schemes to investigate the effects of surface preparation on dielectric integrity. Devices fabricated by this new cleaning procedure were found to exhibit the lowest leakage current level and the best breakdown performance among all samples. The variation in the current-voltage characteristics across a 4-in. wafer was also minimized by this two-step dipping process. The results suggest that the new cleaning procedure is desirable to yield high-quality ultrathin dielectrics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.112120
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  • 9
    Digitale Medien
    Digitale Medien
    Simultaneous shallow-junction formation and gate doping p-channel metal-semiconductor-oxide field-effect transistor process using cobalt silicide as a diffusion/doping source (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 345-347 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Submicron p-metal-semiconductor-oxide field-effect transistors (MOSFETs) have been fabricated using cobalt silicide as a diffusion source for forming shallow p-n junctions and as a doping source for undoped as-deposited amorphous silicon gate (SADDS). The thermal stability of CoSi2 on polycrystalline silicon is shown to be significantly improved by using as-deposited amorphous silicon instead of as-deposited polycrystalline silicon as the gate material. The p-MOSFETs fabricated using the SADDS process exhibit excellent characteristics and open up the possibility of eliminating several masks and implants in more complicated complimentary metal-oxide semiconductor processes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111143
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  • 10
    Digitale Medien
    Digitale Medien
    Degradation mechanisms and improvement of thermal stability of CoSi2/polycrystalline Si layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1505-1507 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Degradation mechanisms of CoSi2/polycrystalline Si (polycide) films have been investigated. CoSi2 was formed on various silicon substrates (stacked or one-layer structures composed of polycrystalline Si 800–10 800 A(ring) and amorphous Si 800–3000 A(ring)). The thermal stability of these silicide films were examined using four-point probe measurement. It was found that the microstructure of the underlying silicon substrate, rather than the grain size of the CoSi2 or the silicide/polycrystalline Si interface, has the greatest influence on the thermal stability of the polycide films. The CoSi2 formed on as-deposited amorphous Si provides the maximum thermal stability. Those films are stable at 1000 °C up to 120 s, even for undoped polycide films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111873
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