Publikationsdatum:
2016-11-01
Beschreibung:
Modulation of electrical properties in MoS 2 flakes is an attractive issue from the point of view of device applications. In this work, we demonstrate that an ambipolar behavior in MoS 2 field effect transistors (FETs) can be easily obtained by heating MoS 2 flakes under air atmosphere in the presence of cobalt oxide catalyst (MoS 2 + O 2 → MoO x + SO x ). The catalytic oxidation of MoS 2 flakes between source-drain electrodes resulted in lots of MoO x nanoparticles (NPs) on MoS 2 flakes with thickness reduction from 64 nm to 17 nm. Consequently, N-type behavior of MoS 2 FETs was converted into ambipolar transport characteristics by MoO x NPs which inject hole carriers to MoS 2 flakes.
Print ISSN:
0003-6951
Digitale ISSN:
1077-3118
Thema:
Physik
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