ISSN:
1089-7623
Quelle:
AIP Digital Archive
Thema:
Physik
,
Elektrotechnik, Elektronik, Nachrichtentechnik
Notizen:
We present data on the spin polarization P and quantum yield Y of electrons photoemitted from negative electron affinity semiconductors, including GaAs(100), GaAsP(100) alloy, and strained GaAs layer epitaxially grown on a GaAsP(100) buffer. Near photothreshold the following values for P(Y) are, respectively, obtained: 26% (2.5×10−2), 40% (1×10−3), and 60% (1.5×10−4). We describe in detail the apparatus used containing a low energy (10–25 keV) Mott polarimeter. The system, completely fitted in a small volume (∼104 cm3) ultrahigh vacuum chamber, is intended as a test facility for characterizing candidate photocathode materials for spin polarized electron sources. © 1995 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.1145364
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