ISSN:
0032-3888
Schlagwort(e):
Chemistry
;
Chemical Engineering
Quelle:
Wiley InterScience Backfile Collection 1832-2000
Thema:
Chemie und Pharmazie
,
Maschinenbau
,
Physik
Notizen:
Submicron lines in negative working, substituted polystyrene resists by focused-ion-beam lithography were demonstrated. These features were transferred into an underlying molybdenum layer by plasma etching using the resist as an etch mask, with the minimum continuous line having a width of 0.20 μm.
Zusätzliches Material:
9 Ill.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1002/pen.760231705
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