ISSN:
1013-9826
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
The pad is one of the key factors in the chemical-mechanical planarization (CMP) process.To ensure the machining capability and the quality of workpieces, the pad must be conditioned in theprocess. It will cause the pad thiner, and be replaced by a new one for losing the machining capabilityfinally. For this reason, a new method of CMP by using the continuous composite electroplating onthe polishing disc is introduced. In this process, the machining ability of the pad can be ensured due tothe continuous Sn-SiO2 composite electroplating. The effect of cathode current density and time ofplating on the characteristics of composite coating and silica wafer are investigated. The experimentindicates that the continuous composite electroplating polishing (CCEP) is an efficiency method forpolishing silicon wafer, and the surface roughness of the silicon wafer is 0.005μm
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.315-316.289.pdf
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