ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The structural and optical properties of molecular beam epitaxy-grown In0.52Ga0.18Al0.30As layers (E300 Kg(approximately-equal-to)1.18 eV), suitable for waveguide applications, have been studied by means of high-resolution x-ray diffraction, absorption, photoluminescence, photoreflectance, and high-excitation intensity photoluminescence spectroscopy. The combination of these techniques allowed us to study the free-exciton states, the impurity related transitions, and the formation of a dense electron-hole plasma.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.353302
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