ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
SiC JFET, compared with SiC MOSFET, is attractive for high power, high temperatureapplications because it is free of gate oxide reliability issues. Trenched-and-Implanted VJFET (TIVJFET)does not require epi-regrowth and is capable of high current density. In this workwe demonstrate two trenched-and-implanted normally-off 4H-SiC vertical junction field-effecttransistors (TI-VJFET), based on 120μm, 4.9×1014cm-3 and 100μm, 6×1014cm-3 drift layers. Thecorresponding devices showed blocking voltage (VB) of 11.1kV and specific on-resistance (RSP_ON)of 124m7cm2, and VB of 10kV and RSP_ON of 87m7cm2. A record-high value for VB2/RSP_ON of1149MW/cm2 was achieved for normally-off SiC FETs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1187.pdf
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