ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The polytype structural variations of a set of SiC bulk wafers with different Nitrogen (N) doping levels, prepared by Physical Vapore Deposition (PVD), are studied. The initial growth conditions were used to produce 6H-polytype SiC, which has been approved for the undoped and lightly doped materials. However, when extreme high N-dopants were applied, the obtained wafer was found with 4H- and 15R-polytype features. Our experimental results of HR-TEM and Raman scattering have revealed clearly the polytype transformation, indicating that the inducement of N in the reactor leads to the polytype transformation of the resulted SiC crystal
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.39.pdf
Permalink