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  • 1
    Electronic Resource
    Electronic Resource
    Influence of thermal annealings in different atmospheres on the band-gap shift and resistivity of CdS thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2204-2207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study by photoacoustic spectroscopy the band-gap shift effect of CdS films. The CdS films were grown by chemical bath deposition and exposed to different annealing atmospheres over a range of temperature in which the sample structure changes. We show the band-gap evolution and resistivity as a function of temperature of thermal annealing and determine the process that produces the best combination of high band-gap energy and low resistivity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360136
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructural effects of thermal annealing on CdS films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3333-3337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin solid films of CdS chemical bath deposited on glass substrates were analyzed by spectroscopic ellipsometry in the spectral range of 1.5–5.0 eV, before and after thermal annealing in Ar atmosphere, at different temperatures. Analyses of the data reveal that the films possess a multilayer structure of two or three layers. The samples which were as-grown and thermal annealed at 208 °C are described by cubic phase layers of CdS. For temperatures of thermal annealing ≥260 °C, the films are better described by layers in the hexagonal phase of CdS. The as-grown sample shows features of three graded density-deficient layers. As the annealing temperatures increases, the density and size of the layer closest to the substrate increases, while the other two remain as density-deficient layers. The sample annealed at the maximum temperature (447 °C) is described by just two layers. All the spectra of the thermally treated samples show a shift in the optical band gap with respect to the as-grown sample. These results are compared with the analyses of previous works. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363244
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  • 3
    Electronic Resource
    Electronic Resource
    Coercive and anisotropy fields in patterned amorphous FeSi submicrometric structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5654-5656 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous FexSi1−x films have been prepared on Si substrates in order to fabricate submicrometric magnetic structures with soft magnetic behavior. The magnetic properties compositional dependence of the unpatterned samples has been analyzed to select the Fe content (x=0.7) with the lowest coercive and anisotropy fields values. Arrays of Fe0.7Si0.3 lines have been fabricated by electron beam lithography combined with a liftoff technique, with typical dimensions of 200 nm linewidth and 1 μm line spacing. These arrays present coercive fields parallel to the line direction as small as 9 Oe. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372479
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  • 4
    Electronic Resource
    Electronic Resource
    High precision Wölter optic calibration facility : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 700-702 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed an off-line facility for very precise characterization of the reflectance and spatial resolution of the grazing incidence Wölter type I x-ray optics used at Nova. The primary component of the facility is a new, very versatile, high brightness x-ray source consisting of a focused DC electron beam incident onto a precision manipulated target-pinhole array. The data are recorded with a selection of detectors. For imaging measurements we use direct exposure x-ray film modules or an x-ray charge-coupled device camera. For energy-resolved reflectance measurements, we use lithium drifted silicon detectors and a proportional counter. An in situ laser alignment system allows precise location and rapid periodic alignment verification of the x-ray point source, the statically mounted Wölter optic, and the chosen detector. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146262
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  • 5
    Electronic Resource
    Electronic Resource
    Laboratory characterization of Wölter x-ray optics : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 703-705 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have conducted characterization measurements of a Wölter grazing incidence x-ray microscope. The measurements were carried out on 5% sectors of a Wölter x-ray optic in a laboratory utilizing a new, very versatile, high brightness x-ray source. Absolute reflectance measurements as a function of x-ray energy were made with Si(Li) detectors to acquire continuum spectra prior to and after reflecting off the Wölter optic. Spatial resolution characteristics of the Wölter were mapped out using backilluminated pinholes or grids imaged onto film or an x-ray charge-coupled device camera. The implications of the asymmetric point spread function are considered. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146263
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  • 6
    Electronic Resource
    Electronic Resource
    Wölter x-ray microscope characterization measurements on Nova : Proceedings of the 9th topical conference on high temperature plasma diagnostics (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5080-5082 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have made in situ measurements of the spatial resolution function for two sectors of the 22× magnification Wölter x-ray microscope. Our experimental technique using backlit grid shots on the Nova laser and our method of analysis are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143498
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  • 7
    Electronic Resource
    Electronic Resource
    Wölter x-ray microscope characterization facility (abstract) : Proceedings of the 9th topical conference on high temperature plasma diagnostics (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5079-5079 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The capability for making ongoing characterization measurements of the spatial resolution and spectral reflectance of the Wölter x-ray optics used at Nova is essential for the interpretation of data taken with these imaging diagnostics. Equally important is an assessment of the long-term performance of grazing incidence x-ray optics used in the harsh environment of an ICF target chamber. We have designed and are currently building an off-line facility for such a characterization. The facility will consist of an x-ray source with specially designed pinhole-target foil array, the Wölter optics housing, monitoring and measuring detectors, a data acquisition system, and an in situ alignment system for rapid periodical verification. Each component of this lab will be discussed, along with possible initial results. This work was performed under the auspices of the U. S. Department of Energy by the Lawrence Livermore National Laboratory under contract No. W-7405-ENG-48.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143497
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  • 8
    Electronic Resource
    Electronic Resource
    Study of the optical properties of fused quartz after a sequential implantation with Si and Au ions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1574-1576 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of Au ions into Si-implanted fused quartz strongly enhances the photoluminescence (PL) intensity around 630 nm measured after subsequent sample annealing at 900 °C. This effect is attributed to the enhancement of the formation of Si nanocrystals by the presence of Au ions and not by ion-implantation-induced defects. This conclusion was deduced by monitoring the defect formation in fused silica by 2 MeV Si ion implantation with doses ranging from 2×1016 to 1×1017 Si/cm2. Some of the 4×1016 Si/cm2-implanted samples were reimplanted at a similar depth with 10 MeV Au ions at doses of 4×1016 and 1.2×1017 Au/cm2. The absorption spectroscopy, electron paramagnetic resonance and PL measurements show the presence of B2 and E′ matrix point defects in as-prepared Si-implanted samples. As these defects disappear after annealing at 600 °C, the presence of a strong PL peak in samples implanted and annealed at 900 °C strongly suggests that the observed luminescence is produced by Si nanoparticle formation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122208
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  • 9
    Electronic Resource
    Electronic Resource
    Low resistivity cubic phase CdS films by chemical bath deposition technique (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1278-1280 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report on cubic CdS thin films with low resistivity by chemical bath deposition (CBD) technique and subsequent annealings in S2 and H2+In. Low temperature photoluminescence, x rays, and transmission spectra support the assumption that S2 annealings contribute to fill the vacancies in the as-deposited films leading to an enlargement of the CdS cubic cell. This fact is revealed by an increase in interplanar distances, evanescence of the PL red broad band, and decrease in band-gap energies. Cubic phase remains after H2+In annealing at higher temperatures. A resistivity as low as 11 Ω cm was obtained at an optimum annealing temperature of 350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112094
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  • 10
    Electronic Resource
    Electronic Resource
    Band-gap shift in CdS semiconductor by photoacoustic spectroscopy: Evidence of a cubic to hexagonal lattice transition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 291-293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band-gap energies of the CdS semiconductor are obtained by a photoacoustic spectroscopy (PAS) technique over a range of temperature of thermal annealing (TTA), in which the evolution of the sample structure is characterized by x-ray diffraction patterns. The PAS experiment gives a set of data for the band-gap shift in the region of the fundamental absorption edge. With increasing TTA the band-gap shift increases up to a critical TTA when its slope decreases in a roughly symmetrical way. It is suggested that at this temperature a cubic to hexagonal-lattice transition occurs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111184
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