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  • 1
    Electronic Resource
    Electronic Resource
    Ensemble Monte Carlo characterization of graded AlxGa1−xAs heterojunction barriers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1114-1122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Injection over and through heterojunction barriers is becoming increasingly more important in modern electronic devices. We consider the properties of graded AlxGa1−xAs heterojunction barriers using a self-consistent ensemble Monte Carlo method. In this paper, we consider barriers with two doping levels, 1×1015 cm−3 and 1×1017 cm−3, and two barrier heights, 100 and 265 meV. The 100-meV barrier resulted in small rectification at room temperature whereas the higher barrier exhibited considerable rectification. In both cases the structure with the lower doped barrier has resulted in a smaller current in both forward and reverse regions due to space-charge effects. The energy and momentum distribution functions deviate from a Maxwellian distribution inside the barrier region and in general show two peaks: one is comprised mainly of electrons near equilibrium and the second arises mainly from ballistic electrons. The higher doped structure resulted in a faster electron relaxation toward equilibrium as a function of position because the electric field decreases rapidly in the barrier region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346728
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  • 2
    Electronic Resource
    Electronic Resource
    Switching speeds in double-barrier resonant-tunneling diode structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7638-7639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Switching speeds are calculated for GaAs-AlGaAs resonant-tunneling diode structures with different barrier widths from the time-dependent Schrödinger equation. The speed is determined by monitoring the device current as the bias voltage is instantaneously switched. Effective mass discontinuities at the barrier and quantum well edges are included. Comparisons with previously published results using the wave packet approach are given. It is found that the turn-off transient is dominated by the lifetime of the quasibound state; however, care must be used in calculating the lifetime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349726
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  • 3
    Electronic Resource
    Electronic Resource
    C-V and I-V characteristics of quantum well varactors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2340-2346 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model for quantum well varactors is presented. The model is used to calculate the device C-V and I-V characteristics and very good agreement has been found between the calculated and measured results. Based on the model, a triple barrier double well varactor has been designed and fabricated. A very high capacitance ratio within a very small bias range is achieved, as designed. Details of the design calculations and experimental results are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352322
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  • 4
    Electronic Resource
    Electronic Resource
    Built-in biaxial strain dependence of Γ-X transport in GaAs/InxAl1−xAs/GaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7907-7914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of built-in biaxial strain on Γ-X transport in n-GaAs/i-InxAl1−xAs/n-GaAs pseudomorphic single-barrier structures (x=0, 0.03, and 0.06) are studied by measuring temperature-dependent I-V characteristics. For the accurate characterization of electron transport across each barrier, a self-consistent numerical model is used to analyze the experimental results. For each structure, the four barrier parameters defined from the thermionic-field-emission theory, the effective Richardson constant A*, the conduction-band offsets ΔEc1,2, and a tunneling mass mn* are extracted by calculating the theoretical I-V characteristics and fitting them to the experimental I-V-T data. The experimentally obtained X-point conduction-band shifts with the addition of indium are compared with the theoretical results calculated based on the model-solid theory. The results indicate that the addition of indium not only splits the degenerate X minima of the InxAl1−xAs barrier, but also shifts the relative barrier heights of both longitudinal and transverse X valleys due to the alloy-dependent band-structure modification. The comparison between the experimental and theoretical results illustrates that the transverse X valleys are the main conduction channel for the Γ-X transport across InxAl1−xAs pseudomorphic barriers. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357901
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of biaxial strain on the intervalence-band absorption spectra of InGaAs/InP systems (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6549-6556 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of biaxial strain on the intervalence-band absorption spectra of p-doped InGaAs/InP bulk layers are investigated. The study is performed by calculating and comparing the absorption coefficients corresponding to the direct transitions between the heavy and light hole bands, between the heavy hole and split-off bands, and between the split-off and light hole bands in both the lattice matched and the strained layers. The valence-band structures of these layers are neither isotropic nor parabolic and hence the k⋅p approach is utilized to calculate the band structures and their corresponding wave functions. The quantities are then invoked in the calculation of the (joint) density of states, the Fermi energy, and the momentum matrix element, which are needed in the evaluation of the intervalence-band absorption coefficients. These calculated results show that the intervalence-band absorption coefficients depend on the strain in the layer. The dependence is determined by the bands involved in the intervalence transition, the polarization of the incident light, and the type of the strain (compressive or tensile). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359064
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of spacer layer thickness on the static characteristics of resonant tunneling diodes (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 899-901 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent quantum mechanical simulation is used to study the effect of spacer layer thickness on such resonant tunneling diode properties as the peak current and peak-to-valley current ratio. It is found that with a low cathode doping the peak current is insensitive to the commonly used spacer layer thickness. However, for higher cathode doping the peak current decreases with increasing spacer layer thickness. This phenomenon is explained on the basis of the junction potential between the heavily doped cathode contact region and the undoped double-barrier region. Thus, for device applications where a high current density is desired the cathode spacer layer should be designed as thin as possible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103398
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of spatially variable effective mass on static and dynamic properties of resonant tunneling devices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2631-2633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of incorporating a spatially variable effective mass in the Schrödinger equation method of resonant tunneling device modeling is investigated. It is shown that inclusion of this effect can produce an order of magnitude difference in the calculated peak current density of the static current voltage (I-V) curve for the resonant tunneling diode. Results for a particular In0.53Ga0.47As-AlAs structure show that much better agreement between theory and experiment is obtained by including this effect. Also, comparison of transient results for an In0.53Ga0.47As-In0.52Al0.48As structure shows a significant change in the diode switching transients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101958
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  • 8
    Electronic Resource
    Electronic Resource
    Phonon assisted intersubband transitions in step quantum well structures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2155-2164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We evaluate effects of heterointerfaces on optical phonon modes and phonon assisted electron intersubband transition rates in step quantum well structures for intersubband lasers. Various phonon modes and electron–phonon interaction Hamiltonians, including the interface modes, confined longitudinal-optical modes, and half space modes in the quantum well structures are calculated based on the macroscopic dielectric continuum model and microscopic analysis. The transfer matrix method is used to calculate the interface modes. The intersubband transition rates due to electron–phonon scattering by these phonon modes are evaluated using Fermi's golden rule, with the electron wave functions obtained by solving the Schrödinger equation for the heterostructures under investigation. Our results show that, compared with the transition rates in the same structures calculated using the bulk phonon modes and the bulk Fröhlich interaction Hamiltonian, the electron interface–phonon interactions give significantly larger transition rates up to an order of magnitude. Therefore, the effects of localized phonon modes, especially the interface modes, must be taken into consideration for optimal device design. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368277
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of intrinsic bistability in resonant tunneling diode modeling (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 371-373 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intrinsic bistability has been observed experimentally and attributed to the effect on the potential profile from stored charge in the quantum well through Poisson's equation. This effect leads to two possible current states corresponding to a single voltage within the negative resistance region. In this letter a simulation method is presented which clearly shows bistability in the current-voltage curve of a resonant tunneling diode. This method self-consistently combines a Thomas–Fermi equilibrium model for the electron concentrations outside the double-barrier structure with a quantum calculation for the concentration inside the structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101874
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  • 10
    Electronic Resource
    Electronic Resource
    Time-dependent modeling of resonant-tunneling diodes from direct solution of the Schrödinger equation (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3564-3569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical solution of the time-dependent Schrödinger equation for resonant-tunneling diodes has been impeded by the difficulty in handling open-system boundary conditions. This paper presents a boundary condition method to simulate the interaction with ideal particle reservoirs at the device boundaries. A switching transient is calculated where the device is switched from the peak current state to the valley current state. In addition, this method was used to develop a small-signal analysis of resonant-tunneling diodes. Results for the small-signal equivalent circuit of a particular device versus frequency are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341500
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