ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Specular 4H-SiC layers have been homoepitaxially grown on 4H-SiC(112¯0), parallel to the c axis (〈0001〉), by chemical vapor deposition at 1500 °C. An x-ray diffraction analysis has revealed that a lattice-mismatch strain between n− epilayers and n+ substrates could be minimized by introducing n-type buffer layers. The donor concentration of unintentionally doped epilayers could be reduced down to 1×1014 cm−3 under a C-rich growth condition. Through isothermal capacitance transient spectroscopy measurements, three acceptor-like traps with activation energies of 0.27, 0.32, and 0.66 eV have been detected with a total trap concentration as low as 3.8×1012 cm−3. The capture cross section of the deepest trap, the Z1 center, at high temperatures has been determined. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1368863
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