Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 1896-1899
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel etching effect of hydrogen ions on the growth of diamond films was observed. The H+ ion bombardment was performed by applying a negative substrate bias during a microwave plasma chemical vapor deposition process, using only hydrogen as a reactant gas. The effect of this bombardment was investigated by means of scanning electron microscopy. It was found that the etching efficiency of H+ ions on non-[001]-oriented grains is more significant than that on grains with their (001) faces parallel to the substrate. A lateral growth of the (001) faces can occur during the bombardment process. As a result, the size of (001) faces increases after H+ etching while grains with other directions are etched off. This effect provides a way to improve the orientation degree of [001] oriented diamond films and might be helpful for obtaining [001] oriented diamond films with small thickness. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.365995
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