Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 427-429
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Low energy plasma enhanced chemical vapor deposition (LEPECVD) has been applied to the synthesis of Si-modulation doped field effect transistor structures, comprising a SiGe relaxed buffer layer and a modulation doped strained Si channel. A growth rate of at least 5 nm/s for the relaxed SiGe buffer layer is well above that obtainable by any other technique. Due to the low ion energies involved in LEPECVD, ion damage is absent, despite a huge plasma density. The structural quality of the LEPECVD grown SiGe buffer layers is comparable to that of state-of-the-art material. The electronic properties of the material were evaluated by growing modulation doped Si quantum wells on the buffer layers. We obtain a low temperature (2 K) Hall mobility of μH=2.5×104 cm2/Vs for the electrons in the Si channel at an electron sheet density of ns=8.6×1011 cm−2. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125776
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