ISSN:
1063-7834
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Low-temperature photoluminescence and photoluminescence excitation spectra of GaAs/AlGaAs semiconductor superlattices having different potential barrier widths (b=20, 30, 50, and 200 Å), i.e., degrees of tunnel coupling between quantum wells, are studied in magnetic fields up to 5 T oriented parallel and perpendicular to the layers of the structure. The changes in the qualitative character of the photoluminescence excitation spectra observed in a parallel magnetic field with increasing tunnel transparency of the barrier correspond to a transition from a quasi-two-dimensional to a quasi-three-dimensional electronic spectrum as a miniband develops in the superlattice. In the photoluminescence excitation spectra of the superlattice with b=50 Å, as the parallel magnetic field is increased, a new line appears in the violet wing of the spatially indirect exciton excitation line, which is absent in a perpendicular field. A similar line was also observed to arise in the photoluminescence spectra. It is shown that the indirect exciton luminescence line can be suppressed by both parallel and perpendicular magnetic fields.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1130445
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