Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 4387-4389
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The topology of self-assembled InAs/GaAs quantum dots was studied by resonant Raman scattering caused by the interface modes localized near the edges of the dots. Evidences were found that on both sides of the InAs layer containing the dots, their topologies show some resemblances. In addition, in the multilayered systems the evidence of the coalescence of the dots (which form vertical columns) in neighbor layers separated by the distance smaller than 25 monolayers was obtained. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.371375
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