Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 8653-8655
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report results of an investigation of interdiffusion in GaAs/Ga0.82In0.18As strained single quantum wells. Wells of width 12–100 A(ring), grown by organometallic vapor phase epitaxy, were subjected to 10 s rapid thermal anneals of 830–950 °C, and shifts in the electron-to-heavy-hole transition energies were detected by 4 K photoluminescence. We employed a powerful computer model to relate postdiffusion well shape to changes in photoluminescence energies, enabling estimation of diffusivity. Interdiffusion rates of 1×10−16–2×10−14 cm2/s and activation energies of 3.1–3.8 eV were obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.353376
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