Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 2931-2933
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Imaging of As- and B-doped silicon regions has been performed in a scanning electron microscope operated in the cathode lens mode, with incident electron energies (EP) as low as 15 eV. The doped regions of n+ (As, 2.5×1020 cm−3) and p+ (B, 8×1019 cm−3) on n-type silicon (∼1015 cm−3) show distinct contrast with electron energies of about 3 keV. The brightest region is n+ followed by p+, then the n-type substrate. The highest contrast for the p+ and n+ type regions is reached at about EP=300 and 15 eV, respectively. The contrast mechanisms are explained in terms of metal-semiconductor contact assuming an adventitious carbon film at the surface. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1415045
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