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  • 1
    Electronic Resource
    Electronic Resource
    Comparative study of radiation-induced electrical and spin active defects in buried SiO2 layers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3634-3640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of paramagnetic defect and positive fixed oxide charge creation in x-irradiated buried SiO2 formed by ion implantation and annealing are presented. Charged oxygen-vacancy centers are argued to be the source of spin active defects but not the primary source of fixed oxide charge. Hydrogenation or fluorination of the oxide enhances the radiation sensitivity for creation of spin active defects but not of trapped positive charge. Annealing of the spin active defects may proceed by a mechanism similar to that involved in charged defect annealing or by the trapping of thermally detrapped, diffusing electrons. Annealing does not involve the trapping of diffusing molecular species as is usual in bulk oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352306
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  • 2
    Electronic Resource
    Electronic Resource
    Defect reactivation and structural relaxation in deposited amorphous SiO2 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3542-3550 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si dangling-bond defects present in films of amorphous SiO2 deposited by plasma-enhanced chemical vapor deposition and induced by exposure to ultraviolet radiation present in low-pressure Kr, Kr/20%F, and O2 plasmas have been studied. It is demonstrated that defects are created and self-annealing occurs during the deposition process. It is argued that low deposition rates should result in the least defective films. Exposure to ≈300-nm wavelength radiation reveals defects whereas ≤260-nm radiation bleaches them. The process of excitation-bleaching can be cycled without apparent loss in total defect density. Studies of defect revelation as a function of substrate temperature during exposure down to 80 K indicate that the process is more efficient at high temperature than at low. Thermal annealing and reactivation measurements show that irreversible annealing begins for temperatures (approximately-greater-than)400 °C and after 800 °C no measurable densities of defects can be reactivated. This regime is demonstrated to correspond with a change in the microscopic structure of the deposited films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349250
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  • 3
    Electronic Resource
    Electronic Resource
    Defects in a-SiO2 deposited from a tetraethoxysilane-oxygen plasma (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2480-2484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied intrinsic and extrinsic paramagnetic defects in as-deposited and annealed samples of amorphous SiO2 produced by plasma enhanced chemical vapor deposition using tetraethoxysilane and O2. In as-deposited samples the total paramagnetic defect density is 1.7×1018 cm−3 decreasing to 3× 1016 cm−3 after annealing for 10 min in N2 at 800 °C. We identify silicon dangling bond defects (O3 ≡Si•) and, tentatively, nonbridging oxygen-hole centers (O3 ≡SiO•), O−2 ions, C2H•5 radicals, and CO−2 radicals. We observe a defect having a g factor of 2.0040 which we cannot identify.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348685
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  • 4
    Electronic Resource
    Electronic Resource
    Ultraviolet induced transformation of polysiloxane films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6647-6651 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the transformation of a polysiloxane film induced by high temperature annealing and by 248 and 193 nm excimer laser irradiation. Auger electron and x-ray photoelectron spectroscopy have been used to study the Si, O, and C profiles and the Si-O valence band structure before and after transformation. We suggest that laser induced transformation results from localized heating and oxidation of the Si-O chains coupled with a breakdown and oxidation of previously attached benzene groups into volatile gaseous products which diffuse out of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348880
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of ionizing radiation on predamaged, amorphous SiO2 (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5162-5168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of low-energy (E∼5 eV per proton) ionizing radiation on predamaged, amorphous SiO2 has been studied through the electron spin resonance of oxygen vacancy centers (E'1). It is demonstrated that the observed line shapes can be explained in terms of dipolar broadening. By independent methods, line-shape fitting, and numerical integration, we extract the defect density as a function of low-energy irradiation dose and observe significant annealing for doses in excess of 10 J/cm2 accumulated. For medium-energy proton irradiations, contradictory results of line fitting and integration suggest the overall number of defects increases during proton irradiation but the mean defect density decreases (i.e., the defect-defect spacing increases). The fractional increase in defect numbers is much smaller than that found by others using 1-MeV electron irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335250
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  • 6
    Electronic Resource
    Electronic Resource
    Retention and switching kinetics of protonated gate field-effect transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2862-2867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The switching and memory retention time has been measured in 50 μm gate-length "pseudo" nonvolatile memory metal–oxide–semiconductor field-effect transistors containing protonated 40 nm gate oxides. Times of the order of 3.3 s are observed for fields of 3 MV cm−1. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to be better than 96% after 5000 s. Measurement of the time dependence of the source–drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287126
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  • 7
    Electronic Resource
    Electronic Resource
    Growth and characterization of GeO2 films obtained by plasma anodization of epitaxial Ge films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4262-4264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous GeO2 has been grown by plasma assisted anodic oxidation at temperatures ≤100 °C. The growth kinetics can be explained in terms of a constant current anodization model. Infrared absorption spectroscopy has been used to characterize the transverse and longitudinal optic vibrational modes of the oxide network. Values are displaced with respect to bulk oxide due to geometrical optic effects and plasma induced network structure variation. In relaxed GeO2 we estimate the mean Ge-O-Ge bridging bond angle to be 〉123° and the full width at half peak height of the bond angle distribution is ∼14°. Electrical measurements on thin oxide capacitors suggest that in 25 nm oxides there are ≤2×1011 negative charges cm−2 and negligible interface state densities. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370341
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  • 8
    Electronic Resource
    Electronic Resource
    Comparitive behavior of radiation and thermally generated protons in amorphous SiO2 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2246-2250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the transport of thermally and radiation generated protons in amorphous SiO2 gate dielectrics of metal–oxide–semiconductor field effect transistors are compared. I conclude that there is no significant behavioral difference between the two types of protons other than the fact that radiation generated protons transport more dispersively—this may be related to the proton densities involved which are typically more than 50 times smaller. From the inversion channel carrier mobility and subthreshold slope measurements on devices with thermally generated protons I conclude that the interfaces are essentially unpassivated. This observation explains why no proton induced interface state generation is observed in the case of devices containing thermally generated protons. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339206
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  • 9
    Electronic Resource
    Electronic Resource
    Evidence for hole and electron trapping in plasma deposited ZrO2 thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4284-4286 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed electron and hole trapping phenomena in thin films of ZrO2 obtained by plasma assisted deposition. Limited thickness dependent measurements suggest that the holes are trapped uniformly through the film while the electrons trap at the ZrO2/Si interface. Relaxation of the trapped holes occurs rapidly after removal of negative stress (∼90% in 15 min), while electron relaxation postpositive stress occurs more slowly (∼10% in 100 min). Cycling between states of positive trapped charge and negative trapped charge by application of the appropriate stressing voltage was observed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1401796
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  • 10
    Electronic Resource
    Electronic Resource
    Concentration dependence of the dielectric constant in mixed oxides MxOyMp′Oq (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 389-393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric constants in mixed oxides ZrO2+Y2O3, Ta2O5+TiO2, Ta2O5+Y2O3, and ZrO2+SiO2 are examined in the context of the oxide additivity rule for molecular polarizability. The experimentally observed concentration dependence of the dielectric constant can be satisfactorily explained by taking account of effective molecular polarizability and molecular volume changes. The simple rule thus enables predictive study of the dielectric constant of oxide alloys. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1375806
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