Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 1927-1929
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Schottky barriers as high (low) as 1.0–1.1 eV (0.2–0.3 eV) obtained in Al/n-GaAs(001) diodes by fabricating Si bilayers at the interface under an excess cation (anion) flux were subjected to sequential annealing cycles in the 100–450 °C temperature range. X-ray photoemission and current–voltage studies indicate a higher stability for high-barrier diodes, which retain 90% of the Si-induced interface dipole after a 450 °C anneal, as compared to only 32% for the low-barrier devices. Qualitatively different microscopic degradation mechanisms were identified in the two cases. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117624
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