ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A high resolution reactive ion etching process, capable of producing nanostructures less than 50 nm wide in a variety of II-VI semiconductors, is described. Using a mixture of methane and hydrogen, binary II-VI compound, e.g., ZnTe, ZnSe, CdTe, ZnS, CdS, and ternary compounds, e.g., CdMnTe and ZnSSe, have been etched. It would appear that the CH4/H2 gas mixture will play the same role for the II-VI semiconductors as it does for the III-Vs, that of seemingly ubiquitous etching system.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106929
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