Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 1990-1991
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thin-film transistors have been fabricated with the compound semiconductor CuInSe2. The fabrication process uses soda-lime glass substrates and deposition conditions for CuInSe2 which result in near-intrinsic material. The devices are of the insulated-gate field-effect transistor configuration and operate in both p- and n-channel modes. Effective mobilities of 3.4 and 13 cm2/V s were measured for holes and electrons, respectively, indicating high potential for use of the technology in display applications.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106159
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