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  • 11
    Electronic Resource
    Electronic Resource
    Erratum: "Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells" [J. Appl. Phys. 90, 5388 (2001)] (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5508-5508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464647
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  • 12
    Electronic Resource
    Electronic Resource
    Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5388-5394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In silicon solar cell fabrication, impurity gettering from Si by an aluminum layer and indiffusion of Al for creating the back surface field (BSF) are inherently carried out in the same process. We have modeled these two processes and analyzed their impact on solar cell efficiency. The output of gettering and Al indiffusion modeling is used as an input for calculation of solar cell efficiency. The cell efficiency gain is obtained as a function of the processes duration. To check the relative contributions of gettering and BSF in improving the cell efficiency, their effects are evaluated together as well as separately. It is found that, for solar cells fabricated from low quality, multicrystalline Si, the efficiency gain is solely due to gettering. In solar cells made of high quality Si, the efficiency gain is primarily due to gettering, but the BSF may play a significant role if the cell thickness is less than about 200 μm. The two effects are found to be synergetic. The model provides a means for optimization of the temperature regime for both processes, as well as for maximization of solar cell efficiency. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412575
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  • 13
    Electronic Resource
    Electronic Resource
    Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2453-2458 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Physical and numerical modeling of impurity gettering from multicrystalline Si for solar cell production has been carried out using Fe as a model impurity. Calculated change of nonradiative recombination coefficient of minority carriers in the course of gettering is used as a tool for evaluating the gettering efficiency. A derivation of the capture cross section of impurity precipitates, as compared to single atom recombination centers, is presented. Low efficiency of the conventional application of the gettering process is explained by the modeling results. The variable temperature gettering process is modeled and predicted to provide high gettering efficiency and short needed gettering times. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371075
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  • 14
    Electronic Resource
    Electronic Resource
    Coprecipitation of oxygen and carbon in Czochralski silicon: A growth kinetic approach (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5926-5935 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen (O) and carbon (C) coprecipitation in Czochralski Si is studied in terms of a diffusion-limited growth model. The interfacial energy increase upon C incorporation into oxide precipitates as well as the changes of O and C concentrations in the Si matrix with annealing time have been taken into account. A comparison of the model predictions with available experimental data has led to the following conclusions: (i) Regardless of the C content in the crystal, it is necessary to introduce sinks for the precipitation-induced excess Si self-interstitials (I) in the matrix for high annealing temperatures. (ii) At annealing temperatures below about 1000 °C, the enhancement effect of C on O precipitation results primarily from an increase in the precipitate density. (iii) The transition in the C precipitation behavior observed in C-rich Si crystals at annealing temperatures around 800 °C is related to a change in the availability of effective I sinks in the Si matrix at these temperatures. (iv) An enhancement of C diffusivity in the presence of excess I plays an important role in increasing the precipitate growth rate, particularly at low temperatures for which no efficient I sinks are available in the Si matrix. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360594
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  • 15
    Electronic Resource
    Electronic Resource
    Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5563-5571 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The partitioning of point defect species during diffusion controlled precipitation of a misfitting compound in Czochralski silicon is studied using the principle of maximum degradation rate of the total system free energy. The degradation rate of the system free energy is obtained from the entropy production due to mass diffusion in the matrix. The results are then compared with those obtained using the principle of maximum growth rate. It is shown that, for a precipitation process involving more than one chemical or structural component species with their concentrations deviating from the appropriate thermal equilibrium values, the maximum growth rate description does not generally correspond to that of the maximum degradation rate of the system free energy. The results are then applied to oxygen precipitation in silicon, showing some equilibrium characteristics pertinent to a multicomponent system with intrinsic point defects acting as pseudocomponents. It is also shown that, depending on the intrinsic point defect concentrations at the far field of diffusion, the oxide precipitate can grow either by emitting or by absorbing both vacancies and Si self-interstitials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359197
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  • 16
    Electronic Resource
    Electronic Resource
    Mass transport equations unifying descriptions of isothermal diffusion, thermomigration, segregation, and position-dependent diffusivity (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2678-2680 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Via the combined use of the jump frequency and chemical force formulation methods, a set of generalized mass transport equations has been derived. This set of equations unifies the descriptions of isothermal diffusion, thermomigration induced by a thermal gradient, and segregation and the position-dependent diffusivity arising from the crystal inhomogeneity. The equations reproduce Fick's laws for the isothermal homogeneous crystal case, and the diffusion-segregation equations for the isothermal inhomogeneous crystal case. Also, a new expression for the heat of transport of thermomigration is obtained. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122551
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  • 17
    Electronic Resource
    Electronic Resource
    Void formation and inhibition of layer intermixing in ion-impIanted GaAs/AlGaAs superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1194-1196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voids have been found in the near-surface region of GaAs/AlGaAs superlattices in a transmission electron microscopy study. The superlattices were Si- or Al-implanted and subsequently either furnace or rapid thermally annealed. Concurrent with the presence of voids is an inhibition of superlattice layer intermixing enhancement in the near-surface region. This inhibition does not occur in the deeper region of the samples where voids are not found. The voids can form via condensation of the Ga and As vacancies produced by the implantation process. We suggest that voids can depress dopant activation, suppress dopant diffusion, and inhibit the superlattice layer intermixing enhancement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101653
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  • 18
    Electronic Resource
    Electronic Resource
    Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 849-851 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of elements migrating via a substitutional-interstitial mechanism in III-V compounds may induce nonequilibrium concentrations of native point defects. It has generally been assumed in the literature that, in the presence of dislocations, the point defects approach their thermal equilibrium concentrations. In contrast, it will be shown here that in III-V compounds the most favorable concentration a perturbed mobile species in one sublattice can reach corresponds to that of establishing a local equilibrium relation with another mobile species in the other sublattice if long-range transport of the defects to crystal surfaces is absent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100846
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  • 19
    Electronic Resource
    Electronic Resource
    Modeling of nucleation and growth of voids in silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 718-726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During Si crystal growth, nucleation and growth of voids and vacancy-type dislocation loops under Si vacancy supersaturation conditions have been modeled. From nucleation barrier calculations, it is shown that voids can be nucleated, but not dislocation loops. The homogeneous nucleation rate of voids has been calculated for different temperatures by assuming different enthalpy of Si vacancy formation. The void growth process has been calculated using a moving boundary formulation. Matching the results of void nucleation and growth simulations and taking into account the competition between the two processes, limited time available, and the crystal cooling rate, it is shown that the experimentally observed void density and size data can be explained if the Si vacancy formation enthalpy is in the range of 2.8–3.4 eV and the void nucleation temperature is in the range of 970–1060 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368128
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  • 20
    Electronic Resource
    Electronic Resource
    Transition metal silicide precipitation in silicon induced by rapid thermal processing and free-surface gettering (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2108-2110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of nickel and copper on defect formation in silicon employing the rapid thermal processing (RTP) scheme. Treatment by RTP induces haze in the silicon wafer front side when its back side is contaminated by either nickel or copper. Transmission electron microscopy studies showed that the haze consisted of metal silicide precipitates, which negates a previous suggestion that "oxidation-induced stacking faults'' are the main defect forming the haze. The morphology and nature of these precipitates have been analyzed. The nickel silicide precipitates were found to be NiSi2 and the copper silicide precipitates are most likely CuSi (zinc blende structure). Both kinds of precipitates exhibited an epitaxial relationship with the silicon substrate and adopted the shape of an inverted pyramid or section of a pyramid. The present CuSi precipitate morphology differs totally from that obtained using furnace annealing, and is attributed to the availability of free-silicon surface as the main silicon self-interstitial sink. Implications for low-temperature ultralarge scale integration processing are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102342
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