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  • 11
    Electronic Resource
    Electronic Resource
    A metal/oxide tunneling transistor (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3071-3073 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a nanometer-scale transistor that operates by using a gate field to modulate the transmission of electrons through a lateral metal/oxide tunnel barrier. Our initial devices have a 30-nm-wide lateral Nb/NbOx tunnel junction on top of a planar Al2O3/Al buried gate. We observe effective modulation of the source–drain current with gate bias at room temperature with negligible gate leakage current. We identify the materials issues that currently limit the device performance, and we offer direction for future device improvements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121544
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  • 12
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3614-3616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) spectroscopy has been performed on a set of self-assembled InSb, GaSb, and AlSb quantum dot (QD) heterostructures grown on GaAs. Strong emission bands with peak energies near 1.15 eV and linewidths of ∼80 meV are observed at 1.6 K from 3 monolayer (ML) InSb and GaSb QDs capped with GaAs. The PL from a capped 4 ML AlSb QD sample is weaker with peak energy at 1.26 eV. The PL bands from these Sb-based QD samples shift to lower energy by 20–50 meV with decreasing excitation power density. This behavior suggests a type II band lineup. Support for this assignment, with electrons in the GaAs and holes in the (In,Ga,Al)Sb QDs, is found from the observed shift of GaSb QD emission to higher energies when the GaAs barrier layers are replaced by Al0.1Ga0.9As.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115747
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  • 13
    Electronic Resource
    Electronic Resource
    Nanostructure patterns written in III–V semiconductors by an atomic force microscope (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1855-1857 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An atomic force microscope has been used to pattern nanometer-scale features in III–V semiconductors by cutting through a thin surface layer of a different semiconductor, which is then used as an etch mask. Cuts up to 10 nm deep, which pass through 2–5 nm thick epilayers of both GaSb and InSb, have been formed. Lines as narrow as 20 and 2 nm deep have been made. Selective etchants and a 5 nm GaSb etch mask are used to transfer patterns into an InAs epilayer. The results are promising for applications requiring trench isolation, such as quantum wires and in-plane gated structures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118712
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  • 14
    Electronic Resource
    Electronic Resource
    Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode–giant magnetoresistance circuits (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1190-1192 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have combined resonant interband tunneling diodes (RITDs) with giant magnetoresistance (GMR) elements so that the GMR element controls the switching current and stable operating voltage points of the hybrid circuit. Parallel and series combinations demonstrate continuous or two-state tunability of the subsequent RITD-like current–voltage characteristic via the magnetic field response of the GMR element. Monostable–bistable transition logic element operation is demonstrated with a GMR/RITD circuit in both the dc limit and clocked operation. The output of such hybrid circuits is nonvolatile, reprogrammable, and multivalued. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1395523
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  • 15
    Electronic Resource
    Electronic Resource
    Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2581-2583 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature current–voltage measurements have been made on InAs/AlSb/GaSb resonant interband tunnel diodes irradiated with 2 MeV protons to determine the effect of displacement damage on the negative resistance peak current Ip and the peak-to-valley current ratio P/V. Diodes with 5 and 13 ML AlSb barrier thickness were irradiated and measured several times until the total fluences reached 1×1015 and 2×1014 H+/cm2, respectively. The current due to radiation-induced defects has a nonlinear voltage dependence, with a large increase occurring in the voltage range between the negative resistance peak and the valley. Ip increased 〈50% while a large increase in the valley current decreased the P/V ratios to about 2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1363697
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  • 16
    Electronic Resource
    Electronic Resource
    A deep-level transient spectroscopy study of high electron mobility transistors subjected to lifetime stress tests (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5613-5617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current and capacitance deep-level transient spectroscopy (DLTS) measurements have been used to examine the effect of accelerated lifetime stress tests on AlGaAs/GaAs high electron mobility transistor structures. The epilayers for these devices were grown by molecular beam epitaxy on semi-insulating GaAs substrates, and they were processed to have 0.7-μm long gates. The major defect detected by both the capacitance and current measurements on unstressed control devices is the DX center in the AlGaAs. The current DLTS tests on stressed samples reveal an additional defect, which is not found in capacitance DLTS measurements on the same devices. The new current DLTS line appears to be a minority-carrier trap, which is not expected as the trap filling pulse was not set to inject minority carriers. These features can be explained if the defect is associated with surface states located between the gate and either the source or the drain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343667
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  • 17
    Electronic Resource
    Electronic Resource
    Defect assisted tunneling in GaAs/AlGaAs/GaAs heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 368-372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A zero-bias conductance peak has been observed in conductivity versus voltage G(V) measurements at 4 K on GaAs/AlGaAs/GaAs tunnel junctions. The peak was found in junctions prepared from several different molecular-beam-epitaxial growths. The central portions of the barriers were spike doped with Si or Be. The peak fits the functional form G(V)=M ln(AV+B) which is expected for electron tunneling via paramagnetic impurities in the barrier, or for Coulomb correlation effects at defects. Shining white light on the junctions reduced the amplitude of the peak, and the new G(V) was found to persist for at least 15 h. Following exposure to light, the conductivity peak was recovered by warming the sample to room temperature. The G(V) curves measured before and after exposure to light were independent of temperature between 1.3 and 30 K. The reduction in amplitude of the peak in G(V) results in a negative photo conductivity at zero bias. At high enough biases, the conductivity after the exposure to light is larger than before as is expected when the light removes electrons from the barrier by photo ionizing defects or impurities. The photo effect indicates that the peak is associated with transport via defects. The defects may be associated with either the Si or Be which were used to spike dope the central portion of the barriers, or with stoichiometric defects produced by the growth. Tunneling assisted by interactions with paramagnetic defects or Coulomb correlation effects are possible explanations for the origin and photo behavior of the peak in G(V).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355860
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  • 18
    Electronic Resource
    Electronic Resource
    Asymmetry in inelastic electron tunneling peak intensities
    Amsterdam : Elsevier
    Solid State Communications 26 (1978), S. 645-647 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(78)90098-4
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  • 19
    Electronic Resource
    Electronic Resource
    Effect of cover electrode metal on inelastic electron tunneling structure
    Amsterdam : Elsevier
    Surface Science 69 (1977), S. 437-443 
    Details
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0039-6028(77)90125-X
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  • 20
    Electronic Resource
    Electronic Resource
    The dependence of metal-insulator-metal conductance curves on the chemisorbed ion concentration in the barrier*
    Amsterdam : Elsevier
    Surface Science 78 (1978), S. L250-L256 
    Details
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0039-6028(78)90227-3
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