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  • 11
    Electronic Resource
    Electronic Resource
    Structure of epitaxial ZnS films on GaAs (1972)
    Springer
    Russian physics journal 15 (1972), S. 1045-1046 
    Details
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00894700
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  • 12
    Electronic Resource
    Electronic Resource
    Study of perfection of layers of AlGaSb(AS) solid solution (1988)
    Springer
    Russian physics journal 31 (1988), S. 73-77 
    Details
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Studies have been carried out on the perfection of then-AlxGa1−xSb1−yAsy (0.12⩽x⩽0.26) layer grown on GaSb substrates under different conditions of lattice matching. During the relaxation of the mechanical stresses at first a system of tilt dislocations with a density of up to 5 · 105 cm−2 is formed while in thick layers (h ∼ 20 μm) a network of misfit dislocations parallel to the heteroboundary is formed. The time required to dissolve a weighed amount of GaAs in the melt is shown to be of major importance for obtaining layers of a solid solution that are isoperiodic with the substrate. The entry of arsenic only in the initial portion of the epitaxial layer can reduce the dislocation density in the layer without decreasing the measured value of Aa. Dissolution of a weighed amount of GaAs in a Ga + Sb melt for two hours at T=730–750°C is sufficient to obtain layers of AlxGa1−xSb1−yAsy solid solution that are isoperiodic with the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896692
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  • 13
    Electronic Resource
    Electronic Resource
    Manganese doping of In1−xGaxAsyP1-y films in liquid-phase epitaxy (1992)
    Springer
    Russian physics journal 35 (1992), S. 20-26 
    Details
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The manganese doping of In1−xGaxAsyP1-y(0 ≦ y ≦ 1) films grown by liquid-phase epitaxy has been investigated. A study has been made of the influence of the solid-solution composition and of the method of introducing the manganese into the solution melt on the electrical properties of the films, and also on the surface morphology, the optical absorption edge, and the mismatch of the film and substrate lattice constants. It is shown that the hole density in the films decreases with decreasing y. The reasons for this are the decrease in the distribution coefficient of the acceptor manganese (from 0.3 to 0.001), the increase in the degree of compensation of the acceptors with donors (from 0.2 to 0.9), and the increase in the acceptor ionization energy. The composition of the InGaAsP:Mn film and the morphology of its surface depend on the method of preparation of the melt, this being explained by the strong interaction of the manganese atoms with the other components of the liquid phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01324978
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