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  • 11
    Electronic Resource
    Electronic Resource
    High quality ZnTe-ZnSe strained-layer superlattice with buffer layer prepared by hot wall epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 239-241 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) substrates have been obtained by the hot wall epitaxy technique through introducing ZnTe and ZnSe buffers. Raman scattering from folded longitudinal acoustic phonons was observed. High-angle satellite reflection peaks due to Cu Kα1 and Kα2 radiations were clearly resolved in the x-ray diffraction patterns, and these patterns can be almost interpreted by a simple step model. The effect of the buffer layer on the strain of the superlattice is evaluated from the results of Raman scattering and x-ray diffraction measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101000
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  • 12
    Electronic Resource
    Electronic Resource
    Pb1−xEuxS films prepared by hot wall epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 274-275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb1−x EuxS films were prepared for the first time using hot wall epitaxy technique. X-ray diffraction and optical transmission measurements were performed for the films. Films with energy gaps up to 0.9 eV (up to x=0.2) were obtained. Lattice constants of the films were very close to that of PbS as is expected from the small lattice mismatch between PbS and EuS. It was found that the energy band gap increases very rapidly with the EuS content up to x=0.05 (dEg/dx=5 eV).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100592
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  • 13
    Electronic Resource
    Electronic Resource
    Transmission spectra of substrate-free ZnTe-ZnSe superlattices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2114-2116 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission spectra of ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) have been measured for the first time and step-like optical-absorption spectra between conduction and valence subbands have been observed. The GaAs substrates with a narrower band gap than the superlattices were partially removed by a chemical etching method. For the ZnTe-ZnSe superlattices with a type II band structure, the transmission spectra provide a powerful tool for determining the effective band gap and band offset, because the spatial indirect transition of separately confined electrons and holes is very weak and therefore difficult to observe in photoluminescence measurements. The absorption thresholds observed in the transmission spectra agree very well with the exciton emissions that appeared in photoluminescence data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102988
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  • 14
    Electronic Resource
    Electronic Resource
    Spatial distribution of CH3 and CH2 radicals in a methane rf discharge (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2616-2618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatial distributions of neutral radicals CH3 and CH2 in a capacitively coupled rf glow discharge of methane were measured by threshold ionization mass spectrometry. A strong asymmetry of the density profile was found for the CH2 radical in the high-pressure (∼100 mTorr) discharge. In addition, comprehensive measurements of electron energy distribution, ionic composition, and radical sticking coefficient were made to use as inputs to theoretical modeling of radicals in the methane plasma. The model predictions agree substantially with the measured radical distributions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103264
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  • 15
    Electronic Resource
    Electronic Resource
    Pb1−xSrxS/PbS double-heterostructure lasers prepared by hot-wall expitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 430-431 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb1−xSrxS/PbS double-heterostructure stripe contact lasers were prepared for the first time using a hot-wall expitaxy technique. The laser operated up to 245 K pulsed (2.97 μm) and 174 K cw, which are the highest operating temperatures ever reported for any semiconductor diode lasers operating around 3 μm. In this letter preparation and properties of the Pb1−xSrxS lasers are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101887
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  • 16
    Electronic Resource
    Electronic Resource
    Properties of Pb1−xEuxTe films prepared by hot-wall epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4572-4574 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb1−xEuxTe films were prepared by hot-wall epitaxy, evaporating PbTe, Eu, and Te from the same quartz-tube furnace onto BaF2 (111) substrates. Good crystalline films were obtained by preparing the films in excess Te vapor. Dependence of the energy band gaps and lattice constants of the Pb1−x EuxTe films on the EuTe content was measured through the optical absorption, x-ray diffraction, and x-ray microanalysis. Temperature dependence of the energy band gap was also measured. Single-phase films with Eg ≤0.83 eV and x≤0.26 were obtained. Derivatives of the band gap with respect to the EuTe content x(dEg/dx) were 3.5 eV at 300 K and 4.5 eV at 77 K up to x=0.06, and the value decreased for x〉0.06. Electrical properties of the Pb1−xEuxTe films were also measured. Bi and Tl were used as donor and acceptor impurities, respectively. High carrier concentration (n, p≥1018 cm−3) and low resistivity films were obtained up to x=0.06 (Eg =0.55 eV).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340157
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  • 17
    Electronic Resource
    Electronic Resource
    Interband transitions of ZnTe-ZnSe superlattices prepared on GaAs (100) by hot wall epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2838-2842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements of ZnTe-ZnSe superlattices prepared on GaAs (100) substrates by hot wall epitaxy method were carried out. Free- and bound-exciton lines due to the interband transitions of the superlattices were observed for the first time. Absorption spectra of the reflection and the transmission modes were measured to confirm the exciton lines. A theoretical calculation based on the envelope function scheme of superlattices is presented to explain the structure dependence of the photoluminescence data, taking strain effects into account.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342722
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  • 18
    Electronic Resource
    Electronic Resource
    Semimetallic Hall properties of PbTe-SnTe superlattice (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1901-1903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The PbTe-SnTe superlattice was expected to be a type-II superlattice where the valence band edge of SnTe is higher than the conduction band edge of PbTe. To ascertain the type-II structure, we prepared the PbTe-SnTe superlattice by hot wall epitaxy, and performed its Hall measurement. Magnetic-field-dependent and relatively small Hall coefficients were obtained for the superlattices, which show coexistence of free electrons and holes in the superlattice. Hall coefficients of the superlattices increased with annealing time owing to the gradual disappearance of the coexistence. Diffusion of Sn was studied using x-ray diffraction analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335995
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  • 19
    Electronic Resource
    Electronic Resource
    Sn diffusion effects on x-ray diffraction patterns of Pb1−xSnxTe–PbSeyTe1−y superlattices (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 797-801 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three kinds of superlattices consisting of good lattice-matched and -mismatched materials (Pb0.76Sn0.24Te-PbSe0.10Te0.90, Pb0.76Sn0.24Te-PbTe, and Pb0.76Sn0.24Te-PbSe0.18Te0.82 superlattices) were prepared by a hot-wall epitaxy and their high-angle x-ray diffractions were measured. Sn-diffusion effects on the satellite structure are studied and it was found that Sn diffusion increases lattice distortion for lattice-matched Pb0.76Sn0.24Te-PbSe0.10Te0.90 superlattice and for lattice-mismatched Pb0.76Sn0.24Te-PbSe0.18Te0.82 superlattice, on the other hand, decreases it for Pb0.76Sn0.24Te-PbTe superlattice. And it was also found that very large diffusion of Sn occurs during growth even when the substrate temperature is 250 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336198
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  • 20
    Electronic Resource
    Electronic Resource
    Growth of GaN films by hot wall epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 665-666 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN films were prepared by hot wall epitaxy on sapphire (0001) substrates from Ga and NH3 sources. Growth characteristics of the GaN films were investigated from reflection high energy electron diffraction (RHEED) and x-ray diffraction measurements, and effects of initial layers on the film growth are discussed. High quality films with streak RHEED patterns were obtained when the films were grown on a GaN initial layer prepared by Ga predeposition and its nitridation on surface nitrided sapphire substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115196
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