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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6302-6312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The development of stress during electromigration along Al lines, constrained within a dielectric in a coplanar test configuration, is measured. It is shown that, above a certain threshold current density, cracking of the dielectric is induced in the vicinity of the anode. Cracking of the dielectric leads to loss of mechanical constraint on the aluminum conductor which, in turn, leads to increases in electrical resistance with continued current flow. The electromigration-induced stresses are determined from the measured frequency shifts induced in a novel ruby strain sensor embedded immediately beneath the interconnect line on a sapphire substrate. The transparency of the sapphire substrate also facilitated the observation of a hitherto unreported form of dielectric cracking, namely cracking from the interconnect along internal interfaces. The observations of dielectric cracking are in agreement with a recent fracture mechanics model. Analysis of the stress data, together with the results of finite element calculations of the strain energy release rate for crack extension, gives a quantitative estimate of the effective valence Z*(=1.3±0.2) for aluminum. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4430-4438 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal stresses exist in ZnO varistors as a result of both crystallographic anisotropy in thermal expansion of the constituents and thermal expansion mismatch between phases. Due to the piezoelectric nature of ZnO, these stresses induce a net electric dipole moment that modifies the grain boundary Schottky barriers and causes an alteration of the varistor current–voltage response in the nonlinear regime. We report Raman piezospectroscopic measurements of residual strains in polycrystalline ZnO and develop a stochastic model for the distribution of potential barrier heights based on the distribution of internal stresses. The model provides a physical basis for barrier height distributions used in electrical network simulations of varistor transport behavior. © 2000 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 540-543 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe an instrument designed to monitor molecular motions in multiphasic, weakly fluorescent microscopic systems. It combines synchrotron radiation, a low irradiance polarized microfluorimeter, and an automated, multiframing, single-photon-counting data acquisition system, and is capable of continually accumulating subnanosecond resolved anisotropy decays with a real-time resolution of about 60 s. The instrument has initially been built to monitor ligand–receptor interactions in living cells, but can equally be applied to the continual measurement of any dynamic process involving fluorescent molecules, that occurs over a time scale from a few minutes to several hours. As a particularly demanding demonstration of its capabilities, we have used it to monitor the environmental constraints imposed on the peptide hormone epidermal growth factor during its endocytosis and recycling to the cell surface in live cells. © 1998 American Institute of Physics.
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3716-3721 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe an instrument based on the novel combination of synchrotron radiation, a high sensitivity time-resolved microfluorimeter, and a multiframe single photon counting data acquisition system. This instrument has been designed specifically to measure kinetic events in live cells using fluorescence resonance energy transfer, and is capable of rapidly collecting multiple consecutive decay profiles from a small number of fluorophores. The low irradiance on the samples (〈10 mW/cm2) greatly reduces probe photobleaching and specimen photodamage during prolonged exposures. The Daresbury Synchrotron Radiation Source provides fully wavelength tunable light pulses that have a full width half-maximum of 160 ps at a repetition rate of 3.125 MHz, with the high temporal stability required for continuous measurements over periods of hours. A very low limit of detection (〈104 molecules/mW/cm2) is accomplished by combining a high-gain single photon counting detection system with a low fluorescence background optical layout. The latter is achieved by the inclusion of collimating optics, a reflecting objective, and a specially designed beam stop situated in the epi-fluorescence light-path. A typical irradiance of 8 mW/cm2 on a sample of ∼105 fluorescein molecules gives, in under 20 s, a fluorescence decay profile with a peak height of 104 counts, over 400 channels, and a signal to background ratio better than 40. The data acquisition system has been developed to have a real-time time-resolved fluorescence collection capability (denoted as TR2) so that fluorescence lifetime data can be continually collected throughout a changing process. To illustrate the potential of this instrument, we present the results of a TR2 experiment in which lifetime measurements of fluorescence resonance energy transfer are used to monitor the degree of clustering of epidermal growth factor receptors during endocytosis, over a period of about 1 h, with a 5 s resolution. © 1996 American Institute of Physics.
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  • 15
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 77 (1955), S. 6618-6620 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
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  • 16
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 74 (1952), S. 6321-6321 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
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  • 17
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 64 (1942), S. 1801-1803 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
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  • 18
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 67 (1945), S. 2059-2061 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1614-1622 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large tensile stresses usually exist in metallic interconnect lines on silicon substrates as a result of thermal mismatch. When a current is subsequently passed any divergence of atomic flux can create superimposed stress variations along the line. Together, these stresses can significantly influence the growth of voids and therefore affect interconnect reliability. In this work, a high-resolution (∼2 μm) optical spectroscopy method has been used to measure the localized stresses around passivated aluminum lines on a silicon wafer, both as-fabricated and after electromigration testing. The method is based on the piezospectroscopic properties of silicon, specifically the frequency shift of the Raman line at 520 R cm−1. By focusing a laser beam at points adjacent to the aluminum lines, the Raman signal was excited and collected. The stresses in the aluminum lines can then be derived from the stresses in the silicon using finite element methods. Large variations of stress along an electromigration-tested line were observed and compared to a theoretical model based on differences in effective diffusivities from grain to grain in a polycrystalline interconnect line. © 1995 American Institute of Physics.
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1517-1522 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Expitaxial ferroelectric BaTiO3 thin films have been grown on (001) MgO and MgO-buffered (001) GaAs substrates by pulsed laser deposition to explore the effect of substrate lattice parameter. X-ray-diffraction studies showed that the BaTiO3 films on both MgO single-crystal substrates and MgO-buffered (001) GaAs substrates have a cube-on-cube epitaxy; however, for the BaTiO3 films grown on MgO the spacing of the planes parallel to the substrate was close to the c-axis dimension of the unconstrained tetragonal phase, whereas the BaTiO3 films on MgO/GaAs exhibited a spacing closer to the a-axis dimension of the unconstrained tetragonal phase. The cube-on-cube epitaxy was maintained through the heterostructures even when thin epitaxial intermediate buffer layers of SrTiO3 and La0.5Sr0.5CoO3 were used. The intermediate layers had no effect on the position of the BaTiO3 peak in θ-2θ scans. Together, these observations indicate that, for the materials combinations studied, it is the thermal-expansion mismatch between the film and the underlying substrate that determines the crystallographic orientation of the BaTiO3 film. Preliminary measurements indicate that the BaTiO3 films are "weakly'' ferroelectric. © 1995 American Institute of Physics.
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