Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2219-2221
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Results of electron mobility calculations at room temperature in quantized cubic silicon carbide (β-SiC) inversion layers are reported. A comparison with silicon mobility curves is provided. Drift velocities both at room and higher temperatures are calculated by Monte Carlo simulations including electron quantization and Coulomb scattering, in addition to phonon and surface roughness scattering. We have also observed that steady-state drift velocity curves show a maximum that decreases as the transverse electric field increases, due to the greater importance of intervalley scattering with respect to polar phonon scattering. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117171
Permalink
|
Location |
Call Number |
Expected |
Availability |