Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 271-273
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The lattice parameters of several Si-doped and undoped GaAs wafers have been measured, using the Bond x-ray diffraction technique. The relative lattice parameters of wafers from the same boule were found to decrease monotonically from seed to tail by as much as 6×10−5(δa/a), following the same trend as the increase in Si content ranging from 1.3 to 9.4×1018 cm−3 (measured by secondary-ion mass spectroscopy). A plot of the change in lattice parameter versus the Si concentration shows a linear trend with a slope which is three times larger than that predicted by Vegard's law. Possible explanations for this discrepancy are discussed.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.100987
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