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  • 11
    Electronic Resource
    Electronic Resource
    Dynamics of current sheet formation and reconnection in two-dimensional coronal loops (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 3184-3193 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current sheet formation and magnetic reconnection in a two-dimensional coronal loop with an X-type neutral line are simulated numerically using compressible, resistive magnetohydrodynamic equations. Numerical results in the linear and nonlinear regimes are shown to be in good agreement with a recent analytical theory [X. Wang and A. Bhattacharjee, Astrophys. J. 420, 415 (1994)]. The topological constraint imposed by helicity-conserving reconnection is discussed. It is found numerically that helicity-conserving reconnection causes the initial X-point structure of the loop to change to Y points, with current sheets at the separatrices encompassing the Y points. Implications for observations are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871150
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  • 12
    Electronic Resource
    Electronic Resource
    Adiabatic ionization energy of CH3SSCH3 (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 8440-8444 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The ionization energy (IE) for CH3SSCH3 has been measured by the pulsed molecular beam photoionization mass spectrometric method. The experimental IE of 8.18±0.03 eV is in excellent agreement with the theoretical prediction of 8.15 eV calculated using the ab initio Gaussian-2 procedure, indicating that the experimental ionization onset can be assigned as the adiabatic IE for CH3SSCH3. The observation of the adiabatic IE(CH3SSCH3) is attributed to the low potential energy barrier for rotation about the S–S bond, which allows CH3SSCH3 to exist dynamically in a wide range of CSSC dihedral angles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465619
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  • 13
    Electronic Resource
    Electronic Resource
    Dynamics of thin current sheets and their disruption by ballooning instabilities: A mechanism for magnetospheric substorms : The 39th annual meeting of division of plasma physics of APS (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 2001-2009 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multipoint satellite observations indicate the development of thin current sheets and an impulsive intensification of the cross-tail current density in the growth phase at near-earth distances during a short interval (〈1 min) just before onset, after a period of sluggish growth (∼0.5–1.5 h). These multiple time scales are accounted for by analysis and two-dimensional magnetohydrodynamic simulation of the magnetotail in the high-Lundquist number regime, including the earth's dipole field. In the slow growth phase, a thin current sheet develops spanning Y points that stretch from the midtail region (∼30RE) to the near-earth region (∼10RE). This is followed by an impulsive enhancement in the current sheet amplitude due to flux pileup, consistent with observations. The stretched magnetotail with an embedded thin current sheet is found to be unstable to an ideal compressible ballooning instability with rapid spatial variation in the dawn–dusk direction. The linear instability is demonstrated by numerical solutions of the ideal ballooning eigenmode equation for a sequence of two-dimensional magnetotail configurations containing a thin current sheet, realized during the impulsive growth phase. Line-tied boundary conditions are imposed at the ionosphere, and shown to have a strong influence on the linear stability of ballooning modes at near-earth distances. It is suggested that the ideal ballooning instability provides a possible mechanism for disrupting the cross-tail current at substorm onset. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872871
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  • 14
    Electronic Resource
    Electronic Resource
    Adiabatic ionization energy and electron affinity of CH2Br (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 6470-6473 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photoionization efficiency spectrum of supersonically cooled CH2Br has been measured near its ionization threshold. The adiabatic ionization energy (IE) of CH2Br is determined to be 8.61±0.01 eV, in excellent agreement with the value obtained previously using the He i photoelectron spectroscopic method. We have also performed Gaussian-2 (G2) calculations on CH2Br+, CH2Br, and CH2Br− which yield values of 8.47 and 0.97 eV for the IE and electron affinity of CH2Br, respectively. The G2 electron affinity is in accord with the literature value of 1.0±0.3 eV calculated from the acidity of CH3Br.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465864
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  • 15
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectroscopy study of Al diffusion in sandwich-ZnSTe structures grown by molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2505-2508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sandwiched structures that consist of ZnSTe/ZnSTe:Al/ZnSTe were fabricated by the molecular beam epitaxy technique on three GaAs substrates oriented along (100), (511), and (711), respectively, to study the thermal diffusion of Al dopant in ZnS0.986Te0.014 matrix by secondary ion mass spectroscopy depth profiling. The relative sensitivity factor of Al respect to Zn was determined to be 4.5±0.5×1019 cm−3. The Al diffusion coefficients at annealing temperature of 450 and 550 °C were found to be dependent on Al concentration. The upper and lower limits of the diffusion coefficients were obtained through a data fitting program based on Fick's second law, the results suggest that the diffusion is anisotropic possibly due to channeling effect. The results also reveal that Al in the matrix is thermally stable at temperature as high as 300 °C and thus prove that Al is a good candidate for the n-type doping of ZnSTe alloy system in terms of thermal stability. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371084
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  • 16
    Electronic Resource
    Electronic Resource
    New instrument for microbeam analysis incorporating submicron imaging and resonance ionization mass spectrometry (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3168-3176 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new reflectron time-of-flight mass spectrometer for surface analysis has been developed that incorporates a Schwarzschild all-reflecting microscope. The instrument is configured for secondary ion mass spectrometry and secondary neutral mass spectrometry using either ion beam bombardment or laser ablation for sample atomization. The sample viewing and imaging system of this instrument enables in situ laser microanalysis with a lateral resolution below 1 μm. The major advantages of using a Schwarzschild objective include good lateral resolution, easy design, low cost, complete achromatism, and both viewing the sample and extracting secondary or photoions normal to its surface. The instrument has a mass resolution of m/Δm≥2000 and is capable of measuring elemental and isotopic compositions at trace levels using resonance ionization. The isotopic ratios of trace concentrations of Ti in μm size SiC grains separated from meteorites were measured. The extremely low ablation laser power used in the above experiment points to the possibility of using low-cost laser systems for laser microprobe applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145546
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  • 17
    Electronic Resource
    Electronic Resource
    Defect ordering in epitaxial α-GaN(0001) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8195-8197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of nominally undoped epitaxial wurtzite-structure α-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped α-GaN films have an ordered point-defect structure. A model of this defect-ordered microstructure, based upon a comparison between experimental results and computer simulations, is proposed. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357873
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  • 18
    Electronic Resource
    Electronic Resource
    Microstructural aspects and mechanism of the C49-to-C54 polymorphic transformation in titanium disilicide (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4384-4388 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructural study of the C49–TiSi2 to C54–TiSi2 polymorphic transformation has been performed to elucidate microstructural evolution and possible mechanism of the phase transformation. It has been shown that the nucleation of the C54–TiSi2 is heterogeneous, and preferentially takes place at triple grain junctions or grain boundaries. The interphase interfaces between C49 and C54 disilicides are often ragged with incoherent characteristics. The growth of the C54 phase is found to proceed by advancing the highly mobile incoherent interfaces in all directions toward the heavily faulted C49 phase. No rigorous orientation relationships are found between the two phases. The microstructural features of the transformation bear some massive characteristics. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359464
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  • 19
    Electronic Resource
    Electronic Resource
    Atomic force microscopy studies of ZnSe self-organized dots fabricated on ZnS/GaP (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1340-1342 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe self-organized dot structures on ZnS thin films were fabricated by the molecular beam epitaxy technique. In situ reflection high-energy electron diffraction studies reveal that growth interruption is required for the formation of the dot structure. Atomic force microscopy (AFM) images of the dots taken within the same day of growth reveal that the dot density increases with increasing ZnSe coverage. A density of 18 μm−2 was achieved with a coverage of 8.0 ZnSe monolayers. AFM images taken at later times (up to six months later) show ripening effects. The average dot size measured at various times after growth is consistent with the prediction of the Ostwald ripening model with a growth time constant of 4±1 days for the structure with a coverage of 8.0 ZnSe monolayers. The dot size and density in the fully ripened state are essentially independent of the initial ZnSe coverage. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122156
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  • 20
    Electronic Resource
    Electronic Resource
    Aluminum-doped n-type ZnSTe alloy grown by molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2519-2521 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful n-type doping of ZnSTe alloy using elemental aluminum source has been carried out by molecular beam epitaxy. Hall effect measurement (300–77 K) was performed on as-grown ZnS0.977Te0.023 epilayers with various dopant concentrations. Electron carrier concentration as high as 1.3×1019 cm−3 has been achieved. For carrier concentration higher than 5×1018 cm−3, the carrier concentration is independent of temperature, possibly indicating formation of a very shallow donor level. A group of ZnS1−xTex epilayers with different x values was doped using a constant aluminum beam flux for studying the dependence of the dopant activation on Te composition. Good activation of Al dopant was obtained for x value from 0 to a few percent, but it became poor for larger x value and finally Al became inactive for x values higher than 10%. Room temperature photoluminescence measurements on doped and undoped ZnS and ZnS1−xTex layers indicate that Al dopants form deep-level radiative centers in addition to a shallow donor level. The characteristics of these deep levels as a function of Te composition have also been studied. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117718
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