Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 2616-2618
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the first observation of voltage gain in the capacitively coupled single-electron transistor (SET). Using parallel-plate and interdigital geometries for the gate capacitor (Cg=1.2 and 0.4 fF) and ultrasmall tunnel junctions with capacitances near 0.2 fF, we find maximum voltage gains of 2.8 and 1.5, respectively. The leakage resistance of the gate is of the order 1012 Ω for the parallel-plate capacitor and greater than 1018 Ω for the interdigital capacitor.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108117
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