ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 11
    Electronic Resource
    Electronic Resource
    Study of epitaxial growth of ZnTe on GaAs (001) by channeling (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 637-641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Channeling is used to describe defects associated with molecular-beam epitaxy growth of (001) ZnTe on (001) GaAs. A high dislocation density (2×1011/cm2) is found in the immediate vicinity of the interface, in addition to misfit dislocations at the interface. Channeling is found to be a strain sensitive method useful for misfit dislocation analysis. Direct scattering on misfit dislocations together with elastic theory calculations reveals that the extent of the misfit dislocation elastic field increases with the interface roughness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341953
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Rough versus dilute interfaces in semiconductor heterostructures: The role of growth conditions (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1287-1289 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe-CdMnTe interfaces grown by molecular beam epitaxy are studied using excitons confined in quantum wells. For increasing growth temperatures Zeeman splittings indicate an enhanced dilution of Mn ions at the interface while the optical linewidths evidence a decreasing roughness. These results directly illustrate the fact that the two methods are sensitive to different scales of interface broadening.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112097
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    Microgun-pumped semiconductor laser (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 796-798 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the feasibility of a novel microgun-pumped semiconductor laser. This is the most compact (a few cm3) and the lowest threshold electron-beam-pumped semiconductor laser ever reported. The electron source is provided by a 104–105/mm2 array of field emissive microtip cathodes each of 1.5 μm diam. The laser operates below 10 kV and below 1 A/cm2. Laser action in a quasi-cw mode with 5 μs pulses at 2 kHz has been obtained between 90 and 300 K with CdTe-CdMnTe graded index separate confinement quantum-well heterostructures, as well as with GaAs-GaAlAs structures. Since neither doping nor ohmic contacts are needed, the microgun laser can use all direct gap semiconductors. It appears as a viable solution for making compact II-VI lasers in the visible domain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108581
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2507-2509 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction is used to study the stability of the (2×2) reconstruction on the (0001) surface of hexagonal-phase GaN as a function of growth parameters. The relationship between the critical conditions for existence of the reconstruction, which corresponds to a unique surface stoichiometry, is used to show the interdependency and scalability of growth parameters. A model is proposed to describe the stoichiometric balance of the species arriving on the surface at the critical conditions for observation of the reconstruction. Hall mobility of the GaN epitaxial layers was improved by growing under these conditions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117722
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 15
    Electronic Resource
    Electronic Resource
    Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3287-3289 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN/AlN heterostructures grown by molecular beam epitaxy are studied by high-resolution transmission electron microscopy (HRTEM). The two-dimensional/three-dimensional Stranski–Krastanow growth mode transition of GaN allows the formation of GaN quantum-dot structures embedded in AlN. The nature of the wetting layer associated with these dots is determined by quantitative HRTEM analysis, based on comparison between interplanar distortion profiles of experimental and simulated images. This study demonstrates a low intermixing between GaN and AlN materials. Such result is also evidenced for the GaN dots. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123321
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 16
    Electronic Resource
    Electronic Resource
    Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2632-2634 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on transmission electron microscopy and optical characterization of GaN dots embedded in an AlN matrix. GaN dots were grown by molecular beam epitaxy on top of an AlN layer deposited on (0001) sapphire. We found that the GaN dots (average diameter of 16 nm, average height of 4 nm) are coherently grown on AlN, but nucleate next to threading edge dislocations that were propagating in AlN. The presence of these adjacent dislocations does not inhibit the optical emission of the GaN dots: contrary to the photoluminescence of thick GaN layers or GaN/AlGaN quantum wells, the photoluminescence of these GaN dots is found to be temperature independent. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125101
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 17
    Electronic Resource
    Electronic Resource
    Improved quality GaN grown by molecular beam epitaxy using In as a surfactant (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2642-2644 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surfactant effect of In during the growth of GaN by molecular beam epitaxy has been investigated. It has been found that the presence of In modifies the diffusion kinetics in the growing GaN surface, leading to the observation of persistent reflection high energy electron diffraction intensity oscillations, characteristic of layer-by-layer growth. Electron microscopy studies revealed drastic modifications of the GaN structural properties associated with the presence of In during the growth. When grown in the presence of In, GaN exhibits an intense band edge luminescence, free of the component at 3.41 eV which is characteristic of defects associated with growth in N-rich conditions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122539
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 18
    Electronic Resource
    Electronic Resource
    Arsenic mediated reconstructions on cubic (001) GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1025-1027 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 4×1 (respectively 1×1) (001) GaN surfaces obtained when molecular-beam-epitaxy (MBE) growth is carried out on (001) cubic SiC were exposed to an As background pressure in the MBE chamber: The reconstructions rapidly and irreversibly changed to 2×2 [respectively c(2×2)] as usually observed for GaN growth on (001) GaAs. The usual reversible 2×2/c(2×2) transitions were consequently observed when bringing the Ga flux up or down. The respective positions for the 4×1/1×1 and 2×2/c(2×2) transitions were worked out as a function of the growth parameters. These observations indicate that the 2×2 and c(2×2) GaN surface reconstructions are mediated by As atoms which we tentatively assign to a surfactant effect. A simple structural model involving As dimers is proposed that accounts for Ga coverages of 0.5 and 1 monolayer for the 2×2 and c(2×2) growth regimes, respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118433
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 19
    Electronic Resource
    Electronic Resource
    Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 809-811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc blende (ZB) GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy on AlN buffer layers using 3C-SiC(001) substrates. The two- to three-dimensional growth mode transition is studied by following the evolution of the reflection high-energy electron diffraction pattern. ZB GaN island layers are further examined by atomic force microscopy and transmission electron microscopy, extracting a mean island height of 1.6 nm and a mean diameter of 13 nm at a density of 1.3×1011 cm−2. Embedded ZB GaN quantum dots show strong ultraviolet photoluminescence without any thermal quenching up to room temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306633
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 20
    Electronic Resource
    Electronic Resource
    Self-assembled InGaN quantum dots grown by molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1570-1572 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InGaN islands were grown by molecular-beam epitaxy on GaN, following a Stranski–Krastanow growth mode. Atomic force microscopy revealed that their dimensions were small enough to expect zero-dimensional quantum effects: the islands were typically 27 nm wide and 2.9 nm high. Strong blue-violet photoluminescence of the dots is observed, persisting up to room temperature. The temperature dependence of the photoluminescence is analyzed and compared to that of InGaN quantum well and bulk samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126098
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...