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  • 1
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    Semiconductor research (1965)
    In:  CASI
    Details
    Publication Date: 2006-10-26
    Description: Structure preparation for study of space charge limited current of electrons in silicon
    Keywords: MACHINE ELEMENTS AND PROCESSES
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  • 2
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    Palladium silicide formation under the influence of nitrogen and oxygen impurities (1985)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 57; 232-236
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  • 3
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    An inert marker study for palladium silicide formation - Si moves in polycrystalline Pd2Si (1985)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 111 and 100 line-type Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 57; 227-231
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  • 4
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    An improved forward I-V method for nonideal Schottky diodes with high series resistance (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: Two methods are described to obtain the value of the series resistance (R) of a Schottky diode from its forward I-V characteristic. The value of R is then used to plot the curve ln(I) versus V sub D (= V - IR) which becomes a straight line even if ln(I) versus V does not. The ideality factor n and the Schottky-barrier height of the diode then follow from the standard procedure. The main advantages of the methods are: (1) a linear regression can be used to calculate the value of R; (2) many data points are used over the whole data range, which raises the accuracy of the results, and (3) the validity of constant R assumption can be checked by the linearity of the ln (I) versus V sub D curve. The methods are illustrated on the experimental data of a real diode.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Electron Devices (ISSN 0018-9383); ED-31; 1502
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  • 5
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    Impurity effects in transition metal silicides (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: Impurities can affect the properties of silicides directly by virtue of their presence. Impurities can also influence the processes by which silicides are formed. The effect of impurities on the reaction of transition metal films with a silicon substrate induced by thermal annealing are well documented. The interpretation of these results is discussed. It is shown that impurity redistribution is a major factor in determining how significant the effect of an impurity is. Redistribution observed for dopant impurities is also discussed.
    Keywords: CHEMISTRY AND MATERIALS (GENERAL)
    Type: Journal of Vacuum Science and Technology B (ISSN 0734-211X); 2; 738-747
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  • 6
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    Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon (1984)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Wiley et al. (1982) have studied sputtered amorphous films of Nb-Ni, Mo-Ni, Si-W, and Si-Mo. Kung et al. (1984) have found that amorphous Ni-Mo films as diffusion barriers between multilayer metallizations on silicon demonstrate good electrical and thermal stability. In the present investigation, the Ni-W system was selected because it is similar to the Ni-Mo system. However, W has a higher silicide formation temperature than Mo. Attention is given to aspects of sample preparation, sample characterization, the interaction between amorphous Ni-W films and Si, the crystallization of amorphous Ni(36)W(64) films on SiO2, amorphous Ni-N-W films, silicide formation and phase separation, and the crystallization of amorphous Ni(36)W(64) and Ni(30)N(21)W(49) layers.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 56; 2740-274
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  • 7
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    Noise and equivalent circuit of double injection. (1968)
    In:  Other Sources
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    Publication Date: 2011-08-12
    Description: Silicon double injection diode, discussing HF noise measurement, Nyquist noise equivalent circuit for double injection process and source of LF noise
    Keywords: ELECTRONIC EQUIPMENT
    Type: ; YAL SOCIETY (
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  • 8
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    Electron trapping in neutron-irradiated silicon studied by space-charge-limited current. (1972)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Description: The trapping and detrapping of electrons is studied through measurements of space-charge-limited current in the temperature range of 77 to 293 K in high-purity silicon after irradiation with 14-MeV neutrons. A model is developed which describes most of the results quantitatively and self-consistently, including dc characteristics. Two distinct trap levels exist: the fast levels lie at 0.14 (plus or minus 0.005) eV below the conduction band, and the slow levels lie at 0.47 (plus or minus 0.01) eV below the conduction band. At 77 K, injected free electrons are initially captured by the fast 0.14-eV traps and then sink into the deep 0.47-eV traps, predominantly without being reemitted into the band. Above approximately 110 K, the detrapping rate from the shallow traps becomes so fast that the deep traps dominate. The results also offer a direct verification of the simple model of space-charge-limited current dominated by shallow and deep traps.
    Keywords: PHYSICS, SOLID-STATE
    Type: Journal of Applied Physics; 43; June 197
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  • 9
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    Studies on the Al2O3-Ti-Mo-Au metallization system (1975)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Description: The behavior of Ti-Mo-Au metallization on Al2O3 and C has been investigated by backscattering spectrometry. Results show that Mo-Au bimetal films typically mix during deposition. Diffusion of Ti in Mo film occurs at 600 C, but is inhibited by the presence of oxygen in the Ti film. Even 1000 A of Mo is not a barrier against interdiffusion of Ti and Au during 20-min anneals at 600 C. The amount of mixing observed also depends on the nature of the substrate which supports the Ti-Mo-Au metallization.
    Keywords: METALLIC MATERIALS
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  • 10
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    Thermal noise measurements on space-charge-limited hole current in silicon. (1973)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Keywords: PHYSICS, SOLID-STATE
    Type: Solid-State Electronics; 16; May 1973
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