Publication Date:
2018-06-23
Description:
Aerospace, Vol. 5, Pages 67: Failure Estimates for SiC Power MOSFETs in Space Electronics Aerospace doi: 10.3390/aerospace5030067 Authors: Kenneth F. Galloway Arthur F. Witulski Ronald D. Schrimpf Andrew L. Sternberg Dennis R. Ball Arto Javanainen Robert A. Reed Brian D. Sierawski Jean-Marie Lauenstein Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space.
Electronic ISSN:
2226-4310
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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