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  • Articles  (209)
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  • Articles  (209)
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  • 1
    Electronic Resource
    Electronic Resource
    Room-temperature hydrogenation effect on Si- and Be-ion-implanted GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1690-1692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenation effects on Si- and Be-ion-implanted GaAs exposed to the hydrogen plasma were investigated. In the sample hydrogenated for 60 min at room temperature, electron mobilities were increased about 21% at 300 K and 1400 cm2/V s at 150 K, showing a little change of the activated Si donor profile. Also, by using deep-level transient spectroscopy and optical deep-level transient spectroscopy, it was observed that the electron and hole traps at Ec−0.62- and Ev+0.68-eV levels, which have been reported as defects due to the implanted damage, were efficiently decreased during the room-temperature hydrogenation. This effect persists during the anneal at 400 °C during 5 min in an argon ambient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351198
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  • 2
    Electronic Resource
    Electronic Resource
    Deep levels in Si- and Be-coimplanted GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 661-664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels and electrical properties in Si- and Be-coimplanted semi-insulating GaAs, grown by liquid-encapsulated Czochralski methods, were investigated. The Si implantation with a dose of 8×1012 ions cm−2 and energy of 65 keV was performed into GaAs already implanted with a Be dose of 2×1012 cm−2 and 90 keV for the purpose of an abrupt implant profile in a deeper region. During the Be coimplantation, an electron deep level at 0.62 eV below the conduction band and a hole deep level at 0.68 eV above the valence band were newly observed. In the Be-implanted region of ion-implanted GaAs, the deep levels Ec − 0.62 eV and Ev + 0.68 eV dominate, but are not found in the bulk. From this work, it is suggested that the Ec − 0.62 eV trap could be the defect due to the implantation damage and that the Ev + 0.68 eV trap could be the Be complex related to a Si dose during the implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349670
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of electron deep traps on generation lifetime in denuded zone of n-type Si wafer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6979-6981 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of electron deep traps on generation lifetime in heat-treated n-type Czochralski-grown (111) Si were examined by generation lifetime and deep level transient spectroscopy measurements. An order of magnitude increase in generation lifetime was observed for the samples having denuded zone, which experienced the high/low heat treatment (20 h at 1100 °C+16 h at 750 °C). Deep electron traps at Ec − 0.47, 0.42, 0.39, and 0.30 eV occur in the oxygen precipitated region by heat treatment. Especially, the concentration of the Ec − 0.47 eV trap decreased below 5×1012 cm−3 in denuded zone. From these results, we conclude that enhancement of generation lifetime in denuded zone may be dominantly related to the decrease of concentration of the Ec − 0.47 eV trap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347636
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  • 4
    Electronic Resource
    Electronic Resource
    Electric-field-enhanced dissociation of the hydrogen-Si donor complex in GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5077-5080 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The passivation and dissociation process of the hydrogen-Si donor complex in plasma-hydrogenated GaAs was presented. The temperature dependent values of dissociation frequencies νd which the first-order kinetics permit, satisfy the relation νd=5.7×1013 exp(−1.79±0.05 eV/kT) s−1 for the no-biased anneals. During electric-field-enhanced anneal experiments, we confirm that no in-diffusion from the passivated region to the bulk is observed in the temperature ranges below 150 °C, and that there is a dissociation frequency region independent of the annealing temperature. Finally, from the electric field annealing experiment on the passivated donor in n-type GaAs, it is suggested that the hydrogen atom in Si-doped GaAs exposed to the plasma hydrogen is negatively charged with the gain of free electrons and passivates the Si donor, and also that the hydrogen atom or the electron of the hydrogen-Si donor complex can be easily released by the electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347070
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  • 5
    Electronic Resource
    Electronic Resource
    Deep levels in undoped bulk InP after rapid thermal annealing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1665-1668 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in rapid thermal annealed InP in metal-insulator-semiconductor (MIS) structures have been studied using deep level transient spectroscopy. Two different insulating layers used in forming MIS structures, a silicon nitride layer and an oxide layer, were fabricated by plasma enhanced chemical vapor deposition and concentrated nitric acid, respectively. In the samples annealed at temperatures between 700 and 900 °C for 10 s, two deep levels having apparent energy depths of 0.43 and 0.35 eV below the conduction band were newly generated. Then, it is considered that they are the defects related with phosphorus vacancy and its complex. Other deep levels observed between 0.55 and 0.79 eV below the conduction band were related with insulating layers. We show an evidence that they might be interface states in the junction of InP and insulator.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346649
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  • 6
    Electronic Resource
    Electronic Resource
    Direct nano-wiring carbon nanotube using growth barrier: A possible mechanism of selective lateral growth (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6044-6050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we report the direct nano-bridging of carbon nanotubes (CNT) between micro-sized islands using conventional photolithography technique necessary for the nanomachining and the molecular device applications compatible with the Si-based process. The most distinct feature in this work is to use a growth barrier of Nb metal or insulating layer on the top of the catalytic metal to prevent the growth of CNT from the vertical direction to the substrate. As a result, CNTs of either "straight line" or a perfect "Y shape" were selectively grown between lateral sides of the catalytic metals or pre-defined electrodes without any trace of vertical growth. The length of the CNTs was 500–1000 nm and the diameter thinner than about 20 nm. We suggest that magnetic and crystallographic characteristics due to the unique interaction between the Nb overlayer and ferromagnetic Ni catalysts and nano-granulation of Ni layer during the growth process are important for the lateral (i.e., parallel to the substrate) CNTs growth. These results clearly indicate that this method would be one of the most feasible fabrication techniques for the nanomachines or the electronic applications with a high integration level. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1466523
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  • 7
    Electronic Resource
    Electronic Resource
    Postgrowth annealing effects of TiO2 thin films grown on InP substrate at low-temperature by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4459-4461 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical properties of titanium dioxide (TiO2) thin films grown on n-type InP(100) substrate by low-pressure metal-organic chemical-vapor deposition have been studied with postannealing. The thin films of TiO2 were deposited at a low temperature of 350 °C using titanium isopropoxide and oxygen. After a postgrowth annealing by the rapid thermal annealing method at a temperature of 850 °C for 15 s, the TiO2/InP structure of only the anatase phase with (101) and (200) peaks was observed by x-ray diffraction analysis. No interface reaction between TiO2 and InP was detected by Auger electron spectroscopy depth profiling. From capacitance–voltage measurement of the Al/TiO2/n-InP structure, the interface density of states at midgap energy and the dielectric constant were approximately low 1012 eV−1 cm−2 at midgap energy and about 50, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361757
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  • 8
    Electronic Resource
    Electronic Resource
    Sulfur and hydrogen passivation effects on thermal stability of RuO2 Schottky contact on n-type GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4276-4278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of sulfur and hydrogen passivation on the thermal stability of RuO2 Schottky contacts on n-type GaAs have been studied by treatments with (NH4)2Sx solution and hydrogen plasma, respectively. The RuO2 thin films were deposited by dc magnetron sputtering using a Ru target and a mixture of argon and oxygen gases. The thermal stability of RuO2 Schottky contacts during thermal annealing in the temperature range from 200 to 550 °C for 10 min was investigated by current-voltage (I–V) measurements and Auger electron spectroscopy. For the sulfur treated sample, the ideality factor was constant at about 1.01 in the whole temperature range and the barrier height of 0.84 eV was maintained up to 350 °C. Hydrogenation treatment, however, was not so effective in preventing the thermal degradation compared to the sulfurization process. It is confirmed that the effective sulfur passivation to enhance the thermal stability of RuO2/GaAs is responsible for the suppression of an oxidation in the interface between GaAs and RuO2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359826
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  • 9
    Electronic Resource
    Electronic Resource
    Metastable behavior of deep levels in hydrogenated GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1866-1868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New metastable behavior of deep levels is found in hydrogenated GaAs doped with Si. A deep level at 0.60 eV below the conduction-band minimum (Ec) is generated during hydrogenation and shows metastable for the Ec − 0.42 eV trap. From the defect transformations observed in biased anneals, these defects are found to be metastable defects associated with hydrogen atoms. Especially, the 400 K biased-anneal experiments indicate that an Ec−0.33 eV trap could be an electric field induced defect, transformed from other intrinsic defects. The Ec − 0.60 eV trap in hydrogenated GaAs could be a hydrogen complex associated with Ec − 0.42 eV trap and the hydrogen atom plays an important role in a metastability of deep level defects in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105056
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  • 10
    Electronic Resource
    Electronic Resource
    Hydrogenation effect on electrical and optical properties of GaAs epilayers grown on Si substrates by metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2405-2407 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenation effects on electrical and optical properties in GaAs epilayers grown on Si substrate by metalorganic chemical vapor deposition have been investigated. In as-grown GaAs layers on Si substrates, typically four deep levels at 0.81, 0.68, 0.57, and 0.53 eV below the conduction band were observed by deep level transient spectroscopy. After hydrogen plasma exposure at 250 °C for 2.5 h, the 0.68 eV level disappeared. In addition, the reverse leakage current in the hydrogenated sample decreased by three orders of magnitude compared to the untreated sample. These effects persist after dehydrogenation process with a 5 min, 400 °C anneal. The results indicate that the hydrogenation for GaAs-on-Si has some benefits to its device application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104885
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